Effects of piezoelectric field, bias and indium fluctuations on a InGaN-GaN single quantum well system

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8 Citations (SciVal)

ID number: ISI:000175997500014

Cite this

@article{24a365efb6c54304a199750caae186ba,

title = "Effects of piezoelectric field, bias and indium fluctuations on a InGaN-GaN single quantum well system",

author = "D Oriato and Walker, \{A B\}",

note = "ID number: ISI:000175997500014",

year = "2002",

language = "English",

volume = "314",

pages = "59--62",

journal = "Physica B Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - Effects of piezoelectric field, bias and indium fluctuations on a InGaN-GaN single quantum well system

AU - Oriato, D

AU - Walker, A B

N1 - ID number: ISI:000175997500014

PY - 2002

Y1 - 2002

UR - https://www.scopus.com/pages/publications/0036503812

M3 - Article

SN - 0921-4526

VL - 314

SP - 59

EP - 62

JO - Physica B Condensed Matter

JF - Physica B Condensed Matter

IS - 1-4

ER -