Effect of residual damage on carrier transport properties in a 4H-SiC double implanted bipolar junction transistor

Research output: Contribution to conference › Paper

Original language	English
Publication status	Published - 2000
Event	Silicon Carbine and Related Materials, ECSCRM2000 - Duration: 1 Jan 2000 → …

Conference	Silicon Carbine and Related Materials, ECSCRM2000
Period	1/01/00 → …

Cite this

@conference{aef5474e32834fd181e7f17c50b38b90,

title = "Effect of residual damage on carrier transport properties in a 4H-SiC double implanted bipolar junction transistor",

author = "S Ortolland and NG Wright and CM Johnson and AP Knights and PG Coleman and CP Burrows and AJ Pidduck",

year = "2000",

language = "English",

note = "Silicon Carbine and Related Materials, ECSCRM2000 ; Conference date: 01-01-2000",

}