Effect of coalescence layer thickness on the properties of thin-chip InGaN/GaN light emitting diodes with embedded photonic quasi-crystal structures

Philip A Shields, Martin D B Charlton, Christopher J Lewins, Xiang Gao, Duncan W E Allsopp, Wang N Wang, Bedwyr Humphreys

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The simulation, fabrication and optical characterization of InGaN/GaN MQW-LEDs grown by MOVPE over embedded photonic quasi-crystals (PQCs) are reported. Fully coalesced GaN layers as thin as 140 nm were grown over 1200 nm high air-gap PQCs using an intermittent pulsed/normal growth method. Simulations and angle-resolved photoluminescence measurements reveal there are strong interactions between the embedded PQC and a wide range of trapped modes as well as the dominant low order mode. The interaction with a dominant low order mode is most pronounced when the LED cavity above the embedded PQC has fewer guided modes.
Original languageEnglish
Pages (from-to)451-455
Number of pages5
JournalPhysica Status Solidi (A)
Volume209
Issue number3
Early online date20 Jan 2012
DOIs
Publication statusPublished - Mar 2012

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