TY - JOUR
T1 - Effect of coalescence layer thickness on the properties of thin-chip InGaN/GaN light emitting diodes with embedded photonic quasi-crystal structures
AU - Shields, Philip A
AU - Charlton, Martin D B
AU - Lewins, Christopher J
AU - Gao, Xiang
AU - Allsopp, Duncan W E
AU - Wang, Wang N
AU - Humphreys, Bedwyr
PY - 2012/3
Y1 - 2012/3
N2 - The simulation, fabrication and optical characterization of InGaN/GaN MQW-LEDs grown by MOVPE over embedded photonic quasi-crystals (PQCs) are reported. Fully coalesced GaN layers as thin as 140 nm were grown over 1200 nm high air-gap PQCs using an intermittent pulsed/normal growth method. Simulations and angle-resolved photoluminescence measurements reveal there are strong interactions between the embedded PQC and a wide range of trapped modes as well as the dominant low order mode. The interaction with a dominant low order mode is most pronounced when the LED cavity above the embedded PQC has fewer guided modes.
AB - The simulation, fabrication and optical characterization of InGaN/GaN MQW-LEDs grown by MOVPE over embedded photonic quasi-crystals (PQCs) are reported. Fully coalesced GaN layers as thin as 140 nm were grown over 1200 nm high air-gap PQCs using an intermittent pulsed/normal growth method. Simulations and angle-resolved photoluminescence measurements reveal there are strong interactions between the embedded PQC and a wide range of trapped modes as well as the dominant low order mode. The interaction with a dominant low order mode is most pronounced when the LED cavity above the embedded PQC has fewer guided modes.
UR - http://www.scopus.com/inward/record.url?scp=84863238179&partnerID=8YFLogxK
UR - http://dx.doi.org/10.1002/pssa.201100420
U2 - 10.1002/pssa.201100420
DO - 10.1002/pssa.201100420
M3 - Article
SN - 1862-6300
VL - 209
SP - 451
EP - 455
JO - Physica Status Solidi (A)
JF - Physica Status Solidi (A)
IS - 3
ER -