Effect of coalescence layer thickness on the properties of thin-chip InGaN/GaN light emitting diodes with embedded photonic quasi-crystal structures

Philip A Shields, Martin D B Charlton, Christopher J Lewins, Xiang Gao, Duncan W E Allsopp, Wang N Wang, Bedwyr Humphreys

Research output: Contribution to journalArticle

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Abstract

The simulation, fabrication and optical characterization of InGaN/GaN MQW-LEDs grown by MOVPE over embedded photonic quasi-crystals (PQCs) are reported. Fully coalesced GaN layers as thin as 140 nm were grown over 1200 nm high air-gap PQCs using an intermittent pulsed/normal growth method. Simulations and angle-resolved photoluminescence measurements reveal there are strong interactions between the embedded PQC and a wide range of trapped modes as well as the dominant low order mode. The interaction with a dominant low order mode is most pronounced when the LED cavity above the embedded PQC has fewer guided modes.
Original languageEnglish
Pages (from-to)451-455
Number of pages5
JournalPhysica Status Solidi (A)
Volume209
Issue number3
Early online date20 Jan 2012
DOIs
Publication statusPublished - Mar 2012

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Photonic crystals
Coalescence
coalescing
Light emitting diodes
light emitting diodes
Crystal structure
chips
photonics
crystal structure
crystals
Metallorganic vapor phase epitaxy
Photoluminescence
simulation
photoluminescence
Fabrication
cavities
fabrication
air
Air
interactions

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Effect of coalescence layer thickness on the properties of thin-chip InGaN/GaN light emitting diodes with embedded photonic quasi-crystal structures. / Shields, Philip A; Charlton, Martin D B; Lewins, Christopher J; Gao, Xiang; Allsopp, Duncan W E; Wang, Wang N; Humphreys, Bedwyr.

In: Physica Status Solidi (A), Vol. 209, No. 3, 03.2012, p. 451-455.

Research output: Contribution to journalArticle

Shields, Philip A ; Charlton, Martin D B ; Lewins, Christopher J ; Gao, Xiang ; Allsopp, Duncan W E ; Wang, Wang N ; Humphreys, Bedwyr. / Effect of coalescence layer thickness on the properties of thin-chip InGaN/GaN light emitting diodes with embedded photonic quasi-crystal structures. In: Physica Status Solidi (A). 2012 ; Vol. 209, No. 3. pp. 451-455.
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