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Effect of bias conditions on pressure sensors based on AlGaN/GaN High Electron Mobility Transistor
E.D. Le Boulbar, M.J. Edwards, S. Vittoz, G. Vanko, K. Brinkfeldt, L. Rufer, P. Johander, T. Lalinský, C.R. Bowen, D.W.E. Allsopp
Research output: Contribution to journal › Article › peer-review
36
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(SciVal)