Dynamics of photosensitized formation of singlet oxygen by porous silicon in aqueous solution

M Fujii, N Nishimura, H Fumon, S Hayashi, D Kovalev, B Goller, J Diener

Research output: Contribution to journal › Article › peer-review

26 Citations (SciVal)

ID number: ISI:000243157900079

Cite this

@article{6ccfc761902547dca38811462f4c4cba,

title = "Dynamics of photosensitized formation of singlet oxygen by porous silicon in aqueous solution",

author = "M Fujii and N Nishimura and H Fumon and S Hayashi and D Kovalev and B Goller and J Diener",

note = "ID number: ISI:000243157900079",

year = "2006",

language = "English",

volume = "100",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Dynamics of photosensitized formation of singlet oxygen by porous silicon in aqueous solution

AU - Fujii, M

AU - Nishimura, N

AU - Fumon, H

AU - Hayashi, S

AU - Kovalev, D

AU - Goller, B

AU - Diener, J

N1 - ID number: ISI:000243157900079

PY - 2006

Y1 - 2006

M3 - Article

SN - 0021-8979

VL - 100

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

ER -