Abstract
Time-resolved spatial measurements were carried out on multi-transverse mode vertical-cavity surface-emitting lasers (VCSEL). The dynamics of mode formation in top-emitting GaAs vertical-cavity surface-emitting lasers (VCSEL) was found including switching on time scales of a few nanoseconds, resulted from carrier diffusion effects rather than recombination. Carrier diffusion effects are found to be important in determining the modal dynamics before thermal effects become important. This mechanism affects the mode structure in a different manner than that resulting from thermally dependent effects that occur over longer time scales.
Original language | English |
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Pages (from-to) | 270-271 |
Number of pages | 2 |
Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
Volume | 11 |
Publication status | Published - 1 Jan 1997 |
Event | Proceedings of the 1997 Conference on Lasers and Electro-Optics, CLEO - Baltimore, MD, USA Duration: 18 May 1997 → 23 May 1997 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering