Dynamic Properties of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon

Constanze Hantschmann, Peter P. Vasil'Ev, Siming M. Chen, Mengya Liao, Alwyn J. Seeds, Huiyun Liu, Richard V. Penty, Ian H. White

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Small-signal experiments with a 2.5 mm-long quantum dot narrow ridge-waveguide laser on silicon show a modulation bandwidth of 1.6 GHz. For the first time, we report key high-speed parameters such as the differential gain and the gain compression factor.

Original languageEnglish
Title of host publication26th International Semiconductor Laser Conference, ISLC 2018
PublisherIEEE
Pages139-140
Number of pages2
Volume2018-September
ISBN (Electronic)9781538664865
DOIs
Publication statusPublished - 30 Oct 2018
Event26th International Semiconductor Laser Conference, ISLC 2018 - Santa Fe, USA United States
Duration: 16 Sep 201819 Sep 2018

Publication series

NameConference Digest - IEEE International Semiconductor Laser Conference
PublisherIEEE
ISSN (Print)0899-9406
ISSN (Electronic)1947-6981

Conference

Conference26th International Semiconductor Laser Conference, ISLC 2018
CountryUSA United States
CitySanta Fe
Period16/09/1819/09/18

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Hantschmann, C., Vasil'Ev, P. P., Chen, S. M., Liao, M., Seeds, A. J., Liu, H., Penty, R. V., & White, I. H. (2018). Dynamic Properties of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon. In 26th International Semiconductor Laser Conference, ISLC 2018 (Vol. 2018-September, pp. 139-140). [8516205] (Conference Digest - IEEE International Semiconductor Laser Conference). IEEE. https://doi.org/10.1109/ISLC.2018.8516205