Dynamic Properties of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon

Constanze Hantschmann, Peter P. Vasil'Ev, Siming M. Chen, Mengya Liao, Alwyn J. Seeds, Huiyun Liu, Richard V. Penty, Ian H. White

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Small-signal experiments with a 2.5 mm-long quantum dot narrow ridge-waveguide laser on silicon show a modulation bandwidth of 1.6 GHz. For the first time, we report key high-speed parameters such as the differential gain and the gain compression factor.

Original languageEnglish
Title of host publication26th International Semiconductor Laser Conference, ISLC 2018
PublisherIEEE
Pages139-140
Number of pages2
Volume2018-September
ISBN (Electronic)9781538664865
DOIs
Publication statusPublished - 30 Oct 2018
Event26th International Semiconductor Laser Conference, ISLC 2018 - Santa Fe, USA United States
Duration: 16 Sep 201819 Sep 2018

Publication series

NameConference Digest - IEEE International Semiconductor Laser Conference
PublisherIEEE
ISSN (Print)0899-9406
ISSN (Electronic)1947-6981

Conference

Conference26th International Semiconductor Laser Conference, ISLC 2018
CountryUSA United States
CitySanta Fe
Period16/09/1819/09/18

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Hantschmann, C., Vasil'Ev, P. P., Chen, S. M., Liao, M., Seeds, A. J., Liu, H., ... White, I. H. (2018). Dynamic Properties of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon. In 26th International Semiconductor Laser Conference, ISLC 2018 (Vol. 2018-September, pp. 139-140). [8516205] (Conference Digest - IEEE International Semiconductor Laser Conference). IEEE. https://doi.org/10.1109/ISLC.2018.8516205

Dynamic Properties of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon. / Hantschmann, Constanze; Vasil'Ev, Peter P.; Chen, Siming M.; Liao, Mengya; Seeds, Alwyn J.; Liu, Huiyun; Penty, Richard V.; White, Ian H.

26th International Semiconductor Laser Conference, ISLC 2018. Vol. 2018-September IEEE, 2018. p. 139-140 8516205 (Conference Digest - IEEE International Semiconductor Laser Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hantschmann, C, Vasil'Ev, PP, Chen, SM, Liao, M, Seeds, AJ, Liu, H, Penty, RV & White, IH 2018, Dynamic Properties of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon. in 26th International Semiconductor Laser Conference, ISLC 2018. vol. 2018-September, 8516205, Conference Digest - IEEE International Semiconductor Laser Conference, IEEE, pp. 139-140, 26th International Semiconductor Laser Conference, ISLC 2018, Santa Fe, USA United States, 16/09/18. https://doi.org/10.1109/ISLC.2018.8516205
Hantschmann C, Vasil'Ev PP, Chen SM, Liao M, Seeds AJ, Liu H et al. Dynamic Properties of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon. In 26th International Semiconductor Laser Conference, ISLC 2018. Vol. 2018-September. IEEE. 2018. p. 139-140. 8516205. (Conference Digest - IEEE International Semiconductor Laser Conference). https://doi.org/10.1109/ISLC.2018.8516205
Hantschmann, Constanze ; Vasil'Ev, Peter P. ; Chen, Siming M. ; Liao, Mengya ; Seeds, Alwyn J. ; Liu, Huiyun ; Penty, Richard V. ; White, Ian H. / Dynamic Properties of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon. 26th International Semiconductor Laser Conference, ISLC 2018. Vol. 2018-September IEEE, 2018. pp. 139-140 (Conference Digest - IEEE International Semiconductor Laser Conference).
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abstract = "Small-signal experiments with a 2.5 mm-long quantum dot narrow ridge-waveguide laser on silicon show a modulation bandwidth of 1.6 GHz. For the first time, we report key high-speed parameters such as the differential gain and the gain compression factor.",
author = "Constanze Hantschmann and Vasil'Ev, {Peter P.} and Chen, {Siming M.} and Mengya Liao and Seeds, {Alwyn J.} and Huiyun Liu and Penty, {Richard V.} and White, {Ian H.}",
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