Dynamic Properties of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon

Constanze Hantschmann; Peter P. Vasil'Ev; Siming M. Chen; Mengya Liao; Alwyn J. Seeds; Huiyun Liu; Richard V. Penty; Ian H. White

doi:10.1109/ISLC.2018.8516205

Dynamic Properties of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon

Constanze Hantschmann, Peter P. Vasil'Ev, Siming M. Chen, Mengya Liao, Alwyn J. Seeds, Huiyun Liu, Richard V. Penty, Ian H. White

Research output: Chapter or section in a book/report/conference proceeding › Chapter in a published conference proceeding

1 Citation (SciVal)

Abstract

Small-signal experiments with a 2.5 mm-long quantum dot narrow ridge-waveguide laser on silicon show a modulation bandwidth of 1.6 GHz. For the first time, we report key high-speed parameters such as the differential gain and the gain compression factor.

Original language	English
Title of host publication	26th International Semiconductor Laser Conference, ISLC 2018
Publisher	IEEE
Pages	139-140
Number of pages	2
Volume	2018-September
ISBN (Electronic)	9781538664865
DOIs	https://doi.org/10.1109/ISLC.2018.8516205
Publication status	Published - 30 Oct 2018
Event	26th International Semiconductor Laser Conference, ISLC 2018 - Santa Fe, USA United States Duration: 16 Sept 2018 → 19 Sept 2018

Publication series

Name	Conference Digest - IEEE International Semiconductor Laser Conference
Publisher	IEEE
ISSN (Print)	0899-9406
ISSN (Electronic)	1947-6981

Conference

Conference	26th International Semiconductor Laser Conference, ISLC 2018
Country/Territory	USA United States
City	Santa Fe
Period	16/09/18 → 19/09/18

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/ISLC.2018.8516205

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Hantschmann, C., Vasil'Ev, P. P., Chen, S. M., Liao, M., Seeds, A. J., Liu, H., Penty, R. V., & White, I. H. (2018). Dynamic Properties of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon. In 26th International Semiconductor Laser Conference, ISLC 2018 (Vol. 2018-September, pp. 139-140). Article 8516205 (Conference Digest - IEEE International Semiconductor Laser Conference). IEEE. https://doi.org/10.1109/ISLC.2018.8516205

Dynamic Properties of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon. / Hantschmann, Constanze; Vasil'Ev, Peter P.; Chen, Siming M. et al.
26th International Semiconductor Laser Conference, ISLC 2018. Vol. 2018-September IEEE, 2018. p. 139-140 8516205 (Conference Digest - IEEE International Semiconductor Laser Conference).

Research output: Chapter or section in a book/report/conference proceeding › Chapter in a published conference proceeding

Hantschmann, C, Vasil'Ev, PP, Chen, SM, Liao, M, Seeds, AJ, Liu, H, Penty, RV & White, IH 2018, Dynamic Properties of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon. in 26th International Semiconductor Laser Conference, ISLC 2018. vol. 2018-September, 8516205, Conference Digest - IEEE International Semiconductor Laser Conference, IEEE, pp. 139-140, 26th International Semiconductor Laser Conference, ISLC 2018, Santa Fe, USA United States, 16/09/18. https://doi.org/10.1109/ISLC.2018.8516205

Hantschmann C, Vasil'Ev PP, Chen SM, Liao M, Seeds AJ, Liu H et al. Dynamic Properties of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon. In 26th International Semiconductor Laser Conference, ISLC 2018. Vol. 2018-September. IEEE. 2018. p. 139-140. 8516205. (Conference Digest - IEEE International Semiconductor Laser Conference). doi: 10.1109/ISLC.2018.8516205

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title = "Dynamic Properties of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon",

abstract = "Small-signal experiments with a 2.5 mm-long quantum dot narrow ridge-waveguide laser on silicon show a modulation bandwidth of 1.6 GHz. For the first time, we report key high-speed parameters such as the differential gain and the gain compression factor.",

author = "Constanze Hantschmann and Vasil'Ev, {Peter P.} and Chen, {Siming M.} and Mengya Liao and Seeds, {Alwyn J.} and Huiyun Liu and Penty, {Richard V.} and White, {Ian H.}",

year = "2018",

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doi = "10.1109/ISLC.2018.8516205",

language = "English",

volume = "2018-September",

series = "Conference Digest - IEEE International Semiconductor Laser Conference",

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AU - Hantschmann, Constanze

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AU - Seeds, Alwyn J.

AU - Liu, Huiyun

AU - Penty, Richard V.

AU - White, Ian H.

PY - 2018/10/30

Y1 - 2018/10/30

N2 - Small-signal experiments with a 2.5 mm-long quantum dot narrow ridge-waveguide laser on silicon show a modulation bandwidth of 1.6 GHz. For the first time, we report key high-speed parameters such as the differential gain and the gain compression factor.

AB - Small-signal experiments with a 2.5 mm-long quantum dot narrow ridge-waveguide laser on silicon show a modulation bandwidth of 1.6 GHz. For the first time, we report key high-speed parameters such as the differential gain and the gain compression factor.

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T2 - 26th International Semiconductor Laser Conference, ISLC 2018

Y2 - 16 September 2018 through 19 September 2018

ER -

Dynamic Properties of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon

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