@inproceedings{3a4df2da9b8e4e97acea73623ba577b0,
title = "Dynamic behavior of Resistive Random Access Memories (RRAMS) based on plastic semiconductor",
abstract = "Resistive Random Access Memories based on metal-oxide polymer diodes are characterized. The dynamic behavior is studied by recording current-voltage characteristics with varying voltage ramp speed. It is demonstrated that these organic memory devices have an internal capacitive double-layer structure, which inhibits the switching at high ramp rates (1000 V/s). This behavior is modeled and explained in terms of an equivalent circuit.",
keywords = "Electrical Bistability, Negative Differential Resistance (NDR), Non-Volatile Memory, Resistive Random Access Memory (RRAM), Switching",
author = "Rocha, {Paulo R F} and Asal Kiazadeh and Qian Chen and Gomes, {Henrique L.}",
year = "2012",
doi = "10.1007/978-3-642-28255-3_59",
language = "English",
isbn = "9783642282546",
volume = "372 AICT",
series = "IFIP Advances in Information and Communication Technology",
pages = "535--540",
booktitle = "Technological Innovation for Value Creation - Third IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2012, Proceedings",
note = "3rd IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2012 ; Conference date: 27-02-2012 Through 29-02-2012",
}