Dynamic behavior of Resistive Random Access Memories (RRAMS) based on plastic semiconductor

Paulo R F Rocha, Asal Kiazadeh, Qian Chen, Henrique L. Gomes

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Resistive Random Access Memories based on metal-oxide polymer diodes are characterized. The dynamic behavior is studied by recording current-voltage characteristics with varying voltage ramp speed. It is demonstrated that these organic memory devices have an internal capacitive double-layer structure, which inhibits the switching at high ramp rates (1000 V/s). This behavior is modeled and explained in terms of an equivalent circuit.

Original languageEnglish
Title of host publicationTechnological Innovation for Value Creation - Third IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2012, Proceedings
Pages535-540
Number of pages6
Volume372 AICT
DOIs
Publication statusPublished - 2012
Event3rd IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2012 - Costa de Caparica, Portugal
Duration: 27 Feb 201229 Feb 2012

Publication series

NameIFIP Advances in Information and Communication Technology
Volume372 AICT
ISSN (Print)18684238

Conference

Conference3rd IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2012
CountryPortugal
CityCosta de Caparica
Period27/02/1229/02/12

Keywords

  • Electrical Bistability
  • Negative Differential Resistance (NDR)
  • Non-Volatile Memory
  • Resistive Random Access Memory (RRAM)
  • Switching

ASJC Scopus subject areas

  • Information Systems and Management

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  • Cite this

    Rocha, P. R. F., Kiazadeh, A., Chen, Q., & Gomes, H. L. (2012). Dynamic behavior of Resistive Random Access Memories (RRAMS) based on plastic semiconductor. In Technological Innovation for Value Creation - Third IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2012, Proceedings (Vol. 372 AICT, pp. 535-540). (IFIP Advances in Information and Communication Technology; Vol. 372 AICT). https://doi.org/10.1007/978-3-642-28255-3_59