Dual-polarity GaN micropillars grown by metalorganic vapour phase epitaxy: Cross-correlation between structural and optical properties

P. M. Coulon, M. Mexis, M. Teisseire, M. Jublot, P. Vennéguès, M. Leroux, J. Zuniga-Perez

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31 Citations (Scopus)

Abstract

Self-assembled catalyst-free GaN micropillars grown on (0001) sapphire substrates by metal organic vapor phase epitaxy are investigated. Transmission electron microscopy, as well as KOH etching, shows the systematic presence of two domains of opposite polarity within each single micropillar. The analysis of the initial growth stages indicates that such double polarity originates at the micropillar/substrate interface, i.e., during the micropillar nucleation, and it propagates along the micropillar. Furthermore, dislocations are also generated at the wire/substrate interface, but bend after several hundreds of nanometers. This leads to micropillars several tens of micrometers in length that are dislocation-free. Spatially resolved cathodoluminescence and microphotoluminescence show large differences in the optical properties of each polarity domain, suggesting unequal impurity/dopant/vacancy incorporation depending on the polarity.

Original languageEnglish
Article number153504
Pages (from-to)1-9
Number of pages9
JournalJournal of Applied Physics
Volume115
Issue number15
Early online date21 Apr 2014
DOIs
Publication statusPublished - Apr 2014

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Coulon, P. M., Mexis, M., Teisseire, M., Jublot, M., Vennéguès, P., Leroux, M., & Zuniga-Perez, J. (2014). Dual-polarity GaN micropillars grown by metalorganic vapour phase epitaxy: Cross-correlation between structural and optical properties. Journal of Applied Physics, 115(15), 1-9. [153504]. https://doi.org/10.1063/1.4870950