“Double” displacement Talbot lithography: Fast, wafer-scale, direct-writing of complex periodic nanopatterns

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• Finished

  Manufacturing of Nano-Engineered III-N Semiconductors

  Shields, P. (PI), Allsopp, D. (CoI) & Wang, W. (CoI)

  EPSRC

  1/05/15 → 30/09/21

  Project: Research council

  • Nanorod 100%
  • Aluminum Nitride 84%
  • Lithography 70%
  • Light-Emitting Diode 68%
  • Vapor Phase Epitaxy 54%

• Manufacturing of Nano-Engineered III-N Semiconductors - Equipment

  Shields, P. (PI) & Allsopp, D. (CoI)

  EPSRC

  1/02/15 → 31/01/20

  Project: Research council

  • Nanowire 100%
  • Lithography 97%
  • Nanorod 91%
  • Aluminum Nitride 89%
  • Vapor Phase Epitaxy 72%