We describe a new low-cost nanolithographic tool for creating periodic arrays of complex, nano-motifs, across large areas within minutes. Displacement Talbot lithography is combined with lateral nanopositioning to enable large-area patterning with the flexibility of a direct-write system. In this way, we can create different periodic patterns in short timescales using a single mask with no mask degradation. We demonstrate multiple exposures, combined with discrete lateral displacements, and single exposures, with continuous displacements, to achieve image inversion, pitch reduction, and nanogaps between metal nanoparticles. Our approach provides a flexible route to create large-area nanopatterned materials and devices in high volumes.
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Department of Electronic & Electrical Engineering - Senior Lecturer
- Centre for Nanoscience and Nanotechnology
- Centre for Sustainable and Circular Technologies (CSCT)
- Condensed Matter Physics CDT
- Centre for Photonics and Photonic Materials
- Materials and Structures Centre (MAST)
- Electronics Materials, Circuits & Systems Research Unit (EMaCS)
Person: Research & Teaching
Dataset for "‘Double’ Displacement Talbot Lithography: fast, wafer-scale, direct-writing of complex periodic nanopatterns"