Doping stability and opto-electronic performance of chemical vapour deposited graphene on transparent flexible substrates

Moon H. Kang, William I. Milne, Matthew Cole

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The primary barrier to wider commercial adoption of graphene lies in reducing the sheet resistance of the transferred material without compromising its high broad-band optical transparency, ideally through the use of novel transfer techniques and doping strategies. Here, chemical vapour deposited graphene was uniformly transferred to polymer supports by thermal and ultraviolet (UV) approaches and the time-dependent evolution of the opto-electronic performance was assessed following exposure to three kinds of common dopants. Doping with FeCl3 and SnCl2 showed minor, and notably time unstable, enhancement in the σoptdc figure of merit, while AuCl3-doping markedly reduced the sheet resistance by 91.5% to 0.29 kΩ/sq for thermally transferred samples and by 34.4% to 0.62 kΩ/sq for UV-transferred samples, offering a means of realising viable transparent flexible conductors that near the indium tin oxide benchmark.

Original languageEnglish
Pages (from-to)39-45
Number of pages7
JournalIET Circuits, Devices and Systems
Volume9
Issue number1
DOIs
Publication statusPublished - 1 Jan 2015

Fingerprint

Graphene
Vapors
Doping (additives)
Sheet resistance
Substrates
Tin oxides
Transparency
Indium
Polymers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering

Cite this

Doping stability and opto-electronic performance of chemical vapour deposited graphene on transparent flexible substrates. / Kang, Moon H.; Milne, William I.; Cole, Matthew.

In: IET Circuits, Devices and Systems, Vol. 9, No. 1, 01.01.2015, p. 39-45.

Research output: Contribution to journalArticle

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