TY - JOUR
T1 - Doping stability and opto-electronic performance of chemical vapour deposited graphene on transparent flexible substrates
AU - Kang, Moon H.
AU - Milne, William I.
AU - Cole, Matthew
PY - 2015/1/1
Y1 - 2015/1/1
N2 - The primary barrier to wider commercial adoption of graphene lies in reducing the sheet resistance of the transferred material without compromising its high broad-band optical transparency, ideally through the use of novel transfer techniques and doping strategies. Here, chemical vapour deposited graphene was uniformly transferred to polymer supports by thermal and ultraviolet (UV) approaches and the time-dependent evolution of the opto-electronic performance was assessed following exposure to three kinds of common dopants. Doping with FeCl3 and SnCl2 showed minor, and notably time unstable, enhancement in the σopt/σdc figure of merit, while AuCl3-doping markedly reduced the sheet resistance by 91.5% to 0.29 kΩ/sq for thermally transferred samples and by 34.4% to 0.62 kΩ/sq for UV-transferred samples, offering a means of realising viable transparent flexible conductors that near the indium tin oxide benchmark.
AB - The primary barrier to wider commercial adoption of graphene lies in reducing the sheet resistance of the transferred material without compromising its high broad-band optical transparency, ideally through the use of novel transfer techniques and doping strategies. Here, chemical vapour deposited graphene was uniformly transferred to polymer supports by thermal and ultraviolet (UV) approaches and the time-dependent evolution of the opto-electronic performance was assessed following exposure to three kinds of common dopants. Doping with FeCl3 and SnCl2 showed minor, and notably time unstable, enhancement in the σopt/σdc figure of merit, while AuCl3-doping markedly reduced the sheet resistance by 91.5% to 0.29 kΩ/sq for thermally transferred samples and by 34.4% to 0.62 kΩ/sq for UV-transferred samples, offering a means of realising viable transparent flexible conductors that near the indium tin oxide benchmark.
UR - http://www.scopus.com/inward/record.url?scp=84923011670&partnerID=8YFLogxK
UR - http://dx.doi.org/10.1049/iet-cds.2014.0074
U2 - 10.1049/iet-cds.2014.0074
DO - 10.1049/iet-cds.2014.0074
M3 - Article
AN - SCOPUS:84923011670
VL - 9
SP - 39
EP - 45
JO - IET Circuits, Devices and Systems
JF - IET Circuits, Devices and Systems
SN - 1751-858X
IS - 1
ER -