Doping kinetics of organic semiconductors investigated by field-effect transistors

F. Maddalena, E. J. Meijer, K. Asadi, D. M. De Leeuw, P. W.M. Blom

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The kinetics of acid doping of the semiconductor regioregular poly-3-hexylthiophene with vaporized chlorosilane have been investigated using field-effect transistors. The dopant density has been derived as a function of temperature and exposure time from the shift in the pinch-off voltage, being the gate bias where current starts to flow. The doping kinetics are perfectly described by empirical stretched exponential time dependence with a saturation dopant density of 1±0.5× 1026 m-3 and a thermally activated relaxation time. We show that a similar relationship holds for previously reported kinetics of poly-thienylene-vinylene doped with molecular oxygen.

Original languageEnglish
Article number043302
JournalApplied Physics Letters
Volume97
Issue number4
DOIs
Publication statusPublished - 26 Jul 2010

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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