TY - JOUR
T1 - Displacement Talbot Lithography for nano-engineering of III-nitride materials
AU - Coulon, Pierre-Marie
AU - Damilano, Benjamin
AU - Alloing, Blandine
AU - Chausse, Pierre
AU - Walde, Sebastian
AU - Enslin, Johannes
AU - Armstrong, Robert
AU - Vézian, Stéphane
AU - Hagedorn, Sylvia
AU - Wernicke, Tim
AU - Massies, Jean
AU - Zúñiga-Pérez, Jesús
AU - Weyers, Markus
AU - Kneissl, Michael
AU - Shields, Philip
N1 - Funding Information:
The authors would like to acknowledge financial support of the EPSRC, UK via Grant No. EP/M015181/1, “Manufacturing nano-engineered III-nitrides”. This work has been supported by the technology facility network RENATECH and the French National Research Agency (ANR) through the project NAPOLI (ANR-18-CE24-0022), and the “Investissements d’Avenir” program GaNeX (ANR-11-LABX-0014). This work was partially supported by the German Federal Ministry of Education and Research (BMBF) through the consortia project “Advanced UV for Life” under contract 03ZZ0134B and by the German Research Foundation (DFG) within the Collaborative Research Center Semiconductor Nanophotonics (CRC 787). This publication is supported by multiple data sets, which are openly available at https://doi.org/10.15125/BATH-00696.
Publisher Copyright:
© 2019, The Author(s).
PY - 2019/12/2
Y1 - 2019/12/2
N2 - Nano-engineering III-nitride semiconductors offers a route to further control the optoelectronic properties, enabling novel functionalities and applications. Although a variety of lithography techniques are currently employed to nano-engineer these materials, the scalability and cost of the fabrication process can be an obstacle for large-scale manufacturing. In this paper, we report on the use of a fast, robust and flexible emerging patterning technique called Displacement Talbot lithography (DTL), to successfully nano-engineer III-nitride materials. DTL, along with its novel and unique combination with a lateral planar displacement (D2TL), allow the fabrication of a variety of periodic nanopatterns with a broad range of filling factors such as nanoholes, nanodots, nanorings and nanolines; all these features being achievable from one single mask. To illustrate the enormous possibilities opened by DTL/D2TL, dielectric and metal masks with a number of nanopatterns have been generated, allowing for the selective area growth of InGaN/GaN core-shell nanorods, the top-down plasma etching of III-nitride nanostructures, the top-down sublimation of GaN nanostructures, the hybrid top-down/bottom-up growth of AlN nanorods and GaN nanotubes, and the fabrication of nanopatterned sapphire substrates for AlN growth. Compared with their planar counterparts, these 3D nanostructures enable the reduction or filtering of structural defects and/or the enhancement of the light extraction, therefore improving the efficiency of the final device. These results, achieved on a wafer scale via DTL and upscalable to larger surfaces, have the potential to unlock the manufacturing of nano-engineered III-nitride materials.
AB - Nano-engineering III-nitride semiconductors offers a route to further control the optoelectronic properties, enabling novel functionalities and applications. Although a variety of lithography techniques are currently employed to nano-engineer these materials, the scalability and cost of the fabrication process can be an obstacle for large-scale manufacturing. In this paper, we report on the use of a fast, robust and flexible emerging patterning technique called Displacement Talbot lithography (DTL), to successfully nano-engineer III-nitride materials. DTL, along with its novel and unique combination with a lateral planar displacement (D2TL), allow the fabrication of a variety of periodic nanopatterns with a broad range of filling factors such as nanoholes, nanodots, nanorings and nanolines; all these features being achievable from one single mask. To illustrate the enormous possibilities opened by DTL/D2TL, dielectric and metal masks with a number of nanopatterns have been generated, allowing for the selective area growth of InGaN/GaN core-shell nanorods, the top-down plasma etching of III-nitride nanostructures, the top-down sublimation of GaN nanostructures, the hybrid top-down/bottom-up growth of AlN nanorods and GaN nanotubes, and the fabrication of nanopatterned sapphire substrates for AlN growth. Compared with their planar counterparts, these 3D nanostructures enable the reduction or filtering of structural defects and/or the enhancement of the light extraction, therefore improving the efficiency of the final device. These results, achieved on a wafer scale via DTL and upscalable to larger surfaces, have the potential to unlock the manufacturing of nano-engineered III-nitride materials.
UR - http://www.scopus.com/inward/record.url?scp=85075314382&partnerID=8YFLogxK
U2 - 10.1038/s41378-019-0101-2
DO - 10.1038/s41378-019-0101-2
M3 - Article
SN - 2055-7434
VL - 5
JO - Microsystems & Nanoengineering
JF - Microsystems & Nanoengineering
IS - 1
M1 - 52
ER -