Direct high-resolution determination of vacancy-type defect profiles in ion-implanted silicon

P G Coleman, R E Mason, M Van Dyken, A P Knights

Research output: Contribution to journal › Article › peer-review

6 Citations (SciVal)

Original language	English
Pages (from-to)	S2323-S2330
Journal	Journal of Physics-Condensed Matter
Volume	17
Issue number	22
Publication status	Published - 2005

ID number: ISI:000230663100022

Cite this

@article{a32900cb419e4127a455e4b6b83e050c,

title = "Direct high-resolution determination of vacancy-type defect profiles in ion-implanted silicon",

author = "Coleman, {P G} and Mason, {R E} and {Van Dyken}, M and Knights, {A P}",

note = "ID number: ISI:000230663100022",

year = "2005",

language = "English",

volume = "17",

pages = "S2323--S2330",

journal = "Journal of Physics-Condensed Matter",

issn = "0953-8984",

publisher = "IOP Publishing",

number = "22",

}

TY - JOUR

T1 - Direct high-resolution determination of vacancy-type defect profiles in ion-implanted silicon

AU - Coleman, P G

AU - Mason, R E

AU - Van Dyken, M

AU - Knights, A P

N1 - ID number: ISI:000230663100022

PY - 2005

Y1 - 2005

M3 - Article

SN - 0953-8984

VL - 17

SP - S2323-S2330

JO - Journal of Physics-Condensed Matter

JF - Journal of Physics-Condensed Matter

IS - 22

ER -