Direct high-resolution determination of vacancy-type defect profiles in ion-implanted silicon

P G Coleman, R E Mason, M Van Dyken, A P Knights

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)
Original languageEnglish
Pages (from-to)S2323-S2330
JournalJournal of Physics-Condensed Matter
Volume17
Issue number22
Publication statusPublished - 2005

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