Direct evidence for the trigonal symmetry of shallow phosphorus acceptors in ZnSe

J J Davies, D Wolverson, S Strauf, P Michler, J Gutowski, M Klude, K Ohkawa, D Hommel, E Tournie, J P Faurie

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7 Citations (SciVal)

Abstract

Spin-flip Raman scattering has been used to provide direct experimental evidence that shallow phosphorus acceptors in relaxed ZnSe epitaxial layers grown on GaAs lie at sites of predominantly trigonal local symmetry. As a consequence, the energy of the heavy-hole bound exciton is about 0.45 meV less than that of the light exciton. This splitting is significantly smaller than (and of opposite sign and different symmetry to) the valence-band splitting of 3 meV observed due to the macroscopic biaxial tensile strain in the same specimens. The behavior is in complete contrast to that of nitrogen acceptors, for which no trigonal field is observed. The experiments provide confirmation of the behavior predicted by previous pseudopotential total-energy calculations for the shallow acceptor states formed by these two different group-V dopants when substituting at selenium sites.
Original languageEnglish
Article number205206
JournalPhysical Review B
Volume6420
Issue number20
DOIs
Publication statusPublished - 2001

Bibliographical note

ID number: ISI:000172464600051

Keywords

  • Raman spectra
  • Jahn-Teller effect
  • impurity states
  • excitons
  • semiconductor epitaxial layers
  • phosphorus
  • photoluminescence
  • II-VI semiconductors
  • zinc compounds

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