Direct chemical vapor deposition of large-area carbon thin films on gallium nitride for transparent electrodes: A first attempt

Jie Sun, Matthew Cole, S. Awais Ahmad, Olof Bäcke, Tommy Ive, Markus Löffler, Niclas Lindvall, Eva Olsson, Kenneth B.K. Teo, Johan Liu, Anders Larsson, August Yurgens, Åsa Haglund

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Abstract

Direct formation of large-area carbon thin films on gallium nitride by chemical vapor deposition without metallic catalysts is demonstrated. A high flow of ammonia is used to stabilize the surface of the GaN (0001)/sapphire substrate during the deposition at 950°C. Various characterization methods verify that the synthesized thin films are largely sp 2 bonded, macroscopically uniform, and electrically conducting. The carbon thin films possess optical transparencies comparable to that of exfoliated graphene. This paper offers a viable route toward the use of carbon-based materials for future transparent electrodes in III-nitride optoelectronics, such as GaN-based light emitting diodes and laser diodes.

Original languageEnglish
Article number6198364
Pages (from-to)494-501
Number of pages8
JournalIEEE Transactions on Semiconductor Manufacturing
Volume25
Issue number3
DOIs
Publication statusPublished - 2012

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Keywords

  • Chemical vapor deposition
  • GaN
  • graphene
  • transparent electrodes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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