Direct chemical vapor deposition of large-area carbon thin films on gallium nitride for transparent electrodes

A first attempt

Jie Sun, Matthew Cole, S. Awais Ahmad, Olof Bäcke, Tommy Ive, Markus Löffler, Niclas Lindvall, Eva Olsson, Kenneth B.K. Teo, Johan Liu, Anders Larsson, August Yurgens, Åsa Haglund

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Direct formation of large-area carbon thin films on gallium nitride by chemical vapor deposition without metallic catalysts is demonstrated. A high flow of ammonia is used to stabilize the surface of the GaN (0001)/sapphire substrate during the deposition at 950°C. Various characterization methods verify that the synthesized thin films are largely sp 2 bonded, macroscopically uniform, and electrically conducting. The carbon thin films possess optical transparencies comparable to that of exfoliated graphene. This paper offers a viable route toward the use of carbon-based materials for future transparent electrodes in III-nitride optoelectronics, such as GaN-based light emitting diodes and laser diodes.

Original languageEnglish
Article number6198364
Pages (from-to)494-501
Number of pages8
JournalIEEE Transactions on Semiconductor Manufacturing
Volume25
Issue number3
DOIs
Publication statusPublished - 2012

Fingerprint

Gallium nitride
Carbon films
gallium nitrides
Chemical vapor deposition
vapor deposition
Thin films
Electrodes
electrodes
carbon
thin films
Graphite
Aluminum Oxide
Ammonia
Sapphire
Nitrides
Optoelectronic devices
Transparency
Graphene
nitrides
Light emitting diodes

Keywords

  • Chemical vapor deposition
  • GaN
  • graphene
  • transparent electrodes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Direct chemical vapor deposition of large-area carbon thin films on gallium nitride for transparent electrodes : A first attempt. / Sun, Jie; Cole, Matthew; Ahmad, S. Awais; Bäcke, Olof; Ive, Tommy; Löffler, Markus; Lindvall, Niclas; Olsson, Eva; Teo, Kenneth B.K.; Liu, Johan; Larsson, Anders; Yurgens, August; Haglund, Åsa.

In: IEEE Transactions on Semiconductor Manufacturing, Vol. 25, No. 3, 6198364, 2012, p. 494-501.

Research output: Contribution to journalArticle

Sun, J, Cole, M, Ahmad, SA, Bäcke, O, Ive, T, Löffler, M, Lindvall, N, Olsson, E, Teo, KBK, Liu, J, Larsson, A, Yurgens, A & Haglund, Å 2012, 'Direct chemical vapor deposition of large-area carbon thin films on gallium nitride for transparent electrodes: A first attempt', IEEE Transactions on Semiconductor Manufacturing, vol. 25, no. 3, 6198364, pp. 494-501. https://doi.org/10.1109/TSM.2012.2198676
Sun, Jie ; Cole, Matthew ; Ahmad, S. Awais ; Bäcke, Olof ; Ive, Tommy ; Löffler, Markus ; Lindvall, Niclas ; Olsson, Eva ; Teo, Kenneth B.K. ; Liu, Johan ; Larsson, Anders ; Yurgens, August ; Haglund, Åsa. / Direct chemical vapor deposition of large-area carbon thin films on gallium nitride for transparent electrodes : A first attempt. In: IEEE Transactions on Semiconductor Manufacturing. 2012 ; Vol. 25, No. 3. pp. 494-501.
@article{2b1e458ddd6f47fc99675748ce8ba7ff,
title = "Direct chemical vapor deposition of large-area carbon thin films on gallium nitride for transparent electrodes: A first attempt",
abstract = "Direct formation of large-area carbon thin films on gallium nitride by chemical vapor deposition without metallic catalysts is demonstrated. A high flow of ammonia is used to stabilize the surface of the GaN (0001)/sapphire substrate during the deposition at 950°C. Various characterization methods verify that the synthesized thin films are largely sp 2 bonded, macroscopically uniform, and electrically conducting. The carbon thin films possess optical transparencies comparable to that of exfoliated graphene. This paper offers a viable route toward the use of carbon-based materials for future transparent electrodes in III-nitride optoelectronics, such as GaN-based light emitting diodes and laser diodes.",
keywords = "Chemical vapor deposition, GaN, graphene, transparent electrodes",
author = "Jie Sun and Matthew Cole and Ahmad, {S. Awais} and Olof B{\"a}cke and Tommy Ive and Markus L{\"o}ffler and Niclas Lindvall and Eva Olsson and Teo, {Kenneth B.K.} and Johan Liu and Anders Larsson and August Yurgens and {\AA}sa Haglund",
year = "2012",
doi = "10.1109/TSM.2012.2198676",
language = "English",
volume = "25",
pages = "494--501",
journal = "IEEE Transactions on Semiconductor Manufacturing",
issn = "0894-6507",
publisher = "IEEE",
number = "3",

}

TY - JOUR

T1 - Direct chemical vapor deposition of large-area carbon thin films on gallium nitride for transparent electrodes

T2 - A first attempt

AU - Sun, Jie

AU - Cole, Matthew

AU - Ahmad, S. Awais

AU - Bäcke, Olof

AU - Ive, Tommy

AU - Löffler, Markus

AU - Lindvall, Niclas

AU - Olsson, Eva

AU - Teo, Kenneth B.K.

AU - Liu, Johan

AU - Larsson, Anders

AU - Yurgens, August

AU - Haglund, Åsa

PY - 2012

Y1 - 2012

N2 - Direct formation of large-area carbon thin films on gallium nitride by chemical vapor deposition without metallic catalysts is demonstrated. A high flow of ammonia is used to stabilize the surface of the GaN (0001)/sapphire substrate during the deposition at 950°C. Various characterization methods verify that the synthesized thin films are largely sp 2 bonded, macroscopically uniform, and electrically conducting. The carbon thin films possess optical transparencies comparable to that of exfoliated graphene. This paper offers a viable route toward the use of carbon-based materials for future transparent electrodes in III-nitride optoelectronics, such as GaN-based light emitting diodes and laser diodes.

AB - Direct formation of large-area carbon thin films on gallium nitride by chemical vapor deposition without metallic catalysts is demonstrated. A high flow of ammonia is used to stabilize the surface of the GaN (0001)/sapphire substrate during the deposition at 950°C. Various characterization methods verify that the synthesized thin films are largely sp 2 bonded, macroscopically uniform, and electrically conducting. The carbon thin films possess optical transparencies comparable to that of exfoliated graphene. This paper offers a viable route toward the use of carbon-based materials for future transparent electrodes in III-nitride optoelectronics, such as GaN-based light emitting diodes and laser diodes.

KW - Chemical vapor deposition

KW - GaN

KW - graphene

KW - transparent electrodes

UR - http://www.scopus.com/inward/record.url?scp=84864681423&partnerID=8YFLogxK

U2 - 10.1109/TSM.2012.2198676

DO - 10.1109/TSM.2012.2198676

M3 - Article

VL - 25

SP - 494

EP - 501

JO - IEEE Transactions on Semiconductor Manufacturing

JF - IEEE Transactions on Semiconductor Manufacturing

SN - 0894-6507

IS - 3

M1 - 6198364

ER -