Abstract
The properties of epitaxial strained Si on Ge (001) grown from SiH 4 at 500 °C and from Si3 H8 at 350 °C have been investigated as a function of film thickness using second harmonic generation (SHG). A clear difference in the corresponding signal amplitude, for both the interface and the "bulk" contributions, is observed. After analysis of the nonlinear susceptibility tensor components, this difference is attributed to the segregation of Ge to the SiO2 /Si interface. It is demonstrated that when employed in combination with more standard experimental techniques, SHG can be a valuable tool for probing and characterizing the SiO2 /Si/Ge interfaces.
Original language | English |
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Article number | 061123 |
Journal | Applied Physics Letters |
Volume | 94 |
Issue number | 6 |
DOIs | |
Publication status | Published - 23 Feb 2009 |