Development of Single-Source CVD Precursors for Group IV, V and VI Metal Disulfides

Joseph Thompson

Research output: ThesisDoctoral Thesis

Abstract

Transition metal dichalcogenides (TMDs) exhibit a wide range of interesting
properties and potential applications. The major barrier to the use of these materials in devices is the formation of high quality thin films. Chemical vapour deposition (CVD) is a scalable technique which can provide high quality thin films over large areas. The principal objective of this work is to synthesise and characterise a range of single-source precursors for the deposition of metal disulfides.

Chapter 1 provides an introduction to the applications, properties and synthesis of TMDs. An overview of CVD highlights the major variants used while the major
classes of metal chalcogenide single-source precursors are reviewed.

Chapter 2 describes the synthesis, characterisation and structures of group IV metal thioureide complexes formed by the insertion of isothiocyanates into group IV metal amides. Heteroleptic and homoleptic group IV metal dithiocarbamates are also investigated with selected complexes used as precursors in aerosol-assisted CVD (AACVD) and low pressure CVD (LPCVD) experiments.

Chapter 3 describes the synthesis, characterisation and structures of tantalum
thioureide complexes formed by the insertion of isothiocyanates into PDMAT or
[(tBuN)Ta(NMe2)3]. Thermal decomposition studies of these complexes are discussed. tert-butylimide based tantalum dithiocarbamates are also investigated as both AACVD and LPCVD precursors for the deposition of TaS2.

Chapter 4 describes the synthesis, characterisation and structures of group VI metal thioureide complexes formed by the reactions of bis(tert-butylimido)bis(amido) group VI metal complexes and either isothiocyanates or disubstituted thioureas. The suitability of these complexes as AACVD precursors is explored. Homoleptic group VI metal dithiocarbamates and xanthates are also investigated as AACVD precursors. Deposition of WS2 onto graphene substrates is studied using the precursor [W(S2CNEt2)4].

Chapter 5 contains experimental procedures and characterisation data for the
complexes and thin films described.

Appendix lists the crystal structure refinement tables and EDX analysis spectra.
LanguageEnglish
QualificationPh.D.
Awarding Institution
  • University of Bath
Supervisors/Advisors
  • Johnson, Andrew, Supervisor
  • Wolverson, Daniel, Supervisor
Award date26 Apr 2017
StatusPublished - 2016

Fingerprint

Disulfides
Chemical vapor deposition
Metals
Isothiocyanates
Aerosols
Coordination Complexes
Tantalum
Thin films
Transition metals
Low pressure chemical vapor deposition
Thiourea
Graphite
Amides
Spectrum analysis
Energy dispersive spectroscopy
Pyrolysis
Crystal structure
Substrates
Experiments

Cite this

Development of Single-Source CVD Precursors for Group IV, V and VI Metal Disulfides. / Thompson, Joseph.

2016. 321 p.

Research output: ThesisDoctoral Thesis

@phdthesis{3fcd745e492745b1843df1ab030a900d,
title = "Development of Single-Source CVD Precursors for Group IV, V and VI Metal Disulfides",
abstract = "Transition metal dichalcogenides (TMDs) exhibit a wide range of interestingproperties and potential applications. The major barrier to the use of these materials in devices is the formation of high quality thin films. Chemical vapour deposition (CVD) is a scalable technique which can provide high quality thin films over large areas. The principal objective of this work is to synthesise and characterise a range of single-source precursors for the deposition of metal disulfides.Chapter 1 provides an introduction to the applications, properties and synthesis of TMDs. An overview of CVD highlights the major variants used while the majorclasses of metal chalcogenide single-source precursors are reviewed.Chapter 2 describes the synthesis, characterisation and structures of group IV metal thioureide complexes formed by the insertion of isothiocyanates into group IV metal amides. Heteroleptic and homoleptic group IV metal dithiocarbamates are also investigated with selected complexes used as precursors in aerosol-assisted CVD (AACVD) and low pressure CVD (LPCVD) experiments.Chapter 3 describes the synthesis, characterisation and structures of tantalumthioureide complexes formed by the insertion of isothiocyanates into PDMAT or[(tBuN)Ta(NMe2)3]. Thermal decomposition studies of these complexes are discussed. tert-butylimide based tantalum dithiocarbamates are also investigated as both AACVD and LPCVD precursors for the deposition of TaS2.Chapter 4 describes the synthesis, characterisation and structures of group VI metal thioureide complexes formed by the reactions of bis(tert-butylimido)bis(amido) group VI metal complexes and either isothiocyanates or disubstituted thioureas. The suitability of these complexes as AACVD precursors is explored. Homoleptic group VI metal dithiocarbamates and xanthates are also investigated as AACVD precursors. Deposition of WS2 onto graphene substrates is studied using the precursor [W(S2CNEt2)4].Chapter 5 contains experimental procedures and characterisation data for thecomplexes and thin films described.Appendix lists the crystal structure refinement tables and EDX analysis spectra.",
author = "Joseph Thompson",
year = "2016",
language = "English",
school = "University of Bath",

}

TY - THES

T1 - Development of Single-Source CVD Precursors for Group IV, V and VI Metal Disulfides

AU - Thompson, Joseph

PY - 2016

Y1 - 2016

N2 - Transition metal dichalcogenides (TMDs) exhibit a wide range of interestingproperties and potential applications. The major barrier to the use of these materials in devices is the formation of high quality thin films. Chemical vapour deposition (CVD) is a scalable technique which can provide high quality thin films over large areas. The principal objective of this work is to synthesise and characterise a range of single-source precursors for the deposition of metal disulfides.Chapter 1 provides an introduction to the applications, properties and synthesis of TMDs. An overview of CVD highlights the major variants used while the majorclasses of metal chalcogenide single-source precursors are reviewed.Chapter 2 describes the synthesis, characterisation and structures of group IV metal thioureide complexes formed by the insertion of isothiocyanates into group IV metal amides. Heteroleptic and homoleptic group IV metal dithiocarbamates are also investigated with selected complexes used as precursors in aerosol-assisted CVD (AACVD) and low pressure CVD (LPCVD) experiments.Chapter 3 describes the synthesis, characterisation and structures of tantalumthioureide complexes formed by the insertion of isothiocyanates into PDMAT or[(tBuN)Ta(NMe2)3]. Thermal decomposition studies of these complexes are discussed. tert-butylimide based tantalum dithiocarbamates are also investigated as both AACVD and LPCVD precursors for the deposition of TaS2.Chapter 4 describes the synthesis, characterisation and structures of group VI metal thioureide complexes formed by the reactions of bis(tert-butylimido)bis(amido) group VI metal complexes and either isothiocyanates or disubstituted thioureas. The suitability of these complexes as AACVD precursors is explored. Homoleptic group VI metal dithiocarbamates and xanthates are also investigated as AACVD precursors. Deposition of WS2 onto graphene substrates is studied using the precursor [W(S2CNEt2)4].Chapter 5 contains experimental procedures and characterisation data for thecomplexes and thin films described.Appendix lists the crystal structure refinement tables and EDX analysis spectra.

AB - Transition metal dichalcogenides (TMDs) exhibit a wide range of interestingproperties and potential applications. The major barrier to the use of these materials in devices is the formation of high quality thin films. Chemical vapour deposition (CVD) is a scalable technique which can provide high quality thin films over large areas. The principal objective of this work is to synthesise and characterise a range of single-source precursors for the deposition of metal disulfides.Chapter 1 provides an introduction to the applications, properties and synthesis of TMDs. An overview of CVD highlights the major variants used while the majorclasses of metal chalcogenide single-source precursors are reviewed.Chapter 2 describes the synthesis, characterisation and structures of group IV metal thioureide complexes formed by the insertion of isothiocyanates into group IV metal amides. Heteroleptic and homoleptic group IV metal dithiocarbamates are also investigated with selected complexes used as precursors in aerosol-assisted CVD (AACVD) and low pressure CVD (LPCVD) experiments.Chapter 3 describes the synthesis, characterisation and structures of tantalumthioureide complexes formed by the insertion of isothiocyanates into PDMAT or[(tBuN)Ta(NMe2)3]. Thermal decomposition studies of these complexes are discussed. tert-butylimide based tantalum dithiocarbamates are also investigated as both AACVD and LPCVD precursors for the deposition of TaS2.Chapter 4 describes the synthesis, characterisation and structures of group VI metal thioureide complexes formed by the reactions of bis(tert-butylimido)bis(amido) group VI metal complexes and either isothiocyanates or disubstituted thioureas. The suitability of these complexes as AACVD precursors is explored. Homoleptic group VI metal dithiocarbamates and xanthates are also investigated as AACVD precursors. Deposition of WS2 onto graphene substrates is studied using the precursor [W(S2CNEt2)4].Chapter 5 contains experimental procedures and characterisation data for thecomplexes and thin films described.Appendix lists the crystal structure refinement tables and EDX analysis spectra.

M3 - Doctoral Thesis

ER -