Determination of the Poisson ratio of (001) and (111) oriented thin films of In(2)O(3) by synchrotron-based x-ray diffraction

K H L Zhang, A Regoutz, R G Palgrave, D J Payne, R G Egdell, Aron Walsh, S P Collins, D Wermeille, R A Cowley

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Abstract

The Poisson ratio. of In(2)O(3) has been determined by measurement of the covariation of in-plane and out-of-plane lattice parameters of strained thin films grown epitaxially on (111) and (001) oriented cubic Y-stabilized ZrO(2) substrates. The experimental results are in good agreement with values for. calculated using atomistic simulation procedures.
Original languageEnglish
Article number233301
JournalPhysical Review B
Volume84
Issue number23
DOIs
Publication statusPublished - 1 Dec 2011

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    Zhang, K. H. L., Regoutz, A., Palgrave, R. G., Payne, D. J., Egdell, R. G., Walsh, A., Collins, S. P., Wermeille, D., & Cowley, R. A. (2011). Determination of the Poisson ratio of (001) and (111) oriented thin films of In(2)O(3) by synchrotron-based x-ray diffraction. Physical Review B, 84(23), [233301]. https://doi.org/10.1103/PhysRevB.84.233301