Detection of Molecular Interactions using a Metal-Insulator-Semiconductor Diode Structure

P Migliorato (Inventor), Pedro Estrela (Inventor), F Yan (Inventor)

Research output: Patent

Original languageEnglish
Patent numberWO2005036156A1
Priority date10/10/03
Publication statusPublished - 2003

Cite this

Detection of Molecular Interactions using a Metal-Insulator-Semiconductor Diode Structure. / Migliorato, P (Inventor); Estrela, Pedro (Inventor); Yan, F (Inventor).

Patent No.: WO2005036156A1.

Research output: Patent

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title = "Detection of Molecular Interactions using a Metal-Insulator-Semiconductor Diode Structure",
author = "P Migliorato and Pedro Estrela and F Yan",
year = "2003",
language = "English",
type = "Patent",
note = "WO2005036156A1",

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TY - PAT

T1 - Detection of Molecular Interactions using a Metal-Insulator-Semiconductor Diode Structure

AU - Migliorato, P

AU - Estrela, Pedro

AU - Yan, F

PY - 2003

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M3 - Patent

M1 - WO2005036156A1

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