Detailed optical and electrical characterisation of green - Orange InGaN/GaN LEDs grown by MOVPE

K. Cavanagh; C. Liu; T. Martin; M. A. Hopkins; S. Sivaraya; D. W E Allsopp

doi:10.1109/ASDAM.2014.6998708

Detailed optical and electrical characterisation of green - Orange InGaN/GaN LEDs grown by MOVPE

K. Cavanagh, C. Liu, T. Martin, M. A. Hopkins, S. Sivaraya, D. W E Allsopp

Research output: Chapter or section in a book/report/conference proceeding › Chapter in a published conference proceeding

Abstract

Green - orange light emitting diodes of were fabricated from InGaN/GaN wafers grown by MOVPE. Detailed measurements of the current and spectral dependence of their electroluminescence were made under low noise DC and pulsed conditions. The results revealed that low electrical to optical power conversion efficiency correlates with degrade current-voltage characteristics.

Original language	English
Title of host publication	Conference Proceedings - 10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014
Publisher	IEEE
Pages	1-4
Number of pages	4
ISBN (Print)	9781479954742
DOIs	https://doi.org/10.1109/ASDAM.2014.6998708
Publication status	Published - 2014
Event	10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014 - Smolenice, UK United Kingdom Duration: 20 Oct 2014 → 22 Oct 2014

Conference

Conference	10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014
Country/Territory	UK United Kingdom
City	Smolenice
Period	20/10/14 → 22/10/14

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10.1109/ASDAM.2014.6998708

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Cavanagh, K., Liu, C., Martin, T., Hopkins, M. A., Sivaraya, S., & Allsopp, D. W. E. (2014). Detailed optical and electrical characterisation of green - Orange InGaN/GaN LEDs grown by MOVPE. In Conference Proceedings - 10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014 (pp. 1-4). Article 6998708 IEEE. https://doi.org/10.1109/ASDAM.2014.6998708

Detailed optical and electrical characterisation of green - Orange InGaN/GaN LEDs grown by MOVPE. / Cavanagh, K.; Liu, C.; Martin, T. et al.
Conference Proceedings - 10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014. IEEE, 2014. p. 1-4 6998708.

Research output: Chapter or section in a book/report/conference proceeding › Chapter in a published conference proceeding

Cavanagh, K, Liu, C, Martin, T, Hopkins, MA, Sivaraya, S & Allsopp, DWE 2014, Detailed optical and electrical characterisation of green - Orange InGaN/GaN LEDs grown by MOVPE. in Conference Proceedings - 10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014., 6998708, IEEE, pp. 1-4, 10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014, Smolenice, UK United Kingdom, 20/10/14. https://doi.org/10.1109/ASDAM.2014.6998708

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abstract = "Green - orange light emitting diodes of were fabricated from InGaN/GaN wafers grown by MOVPE. Detailed measurements of the current and spectral dependence of their electroluminescence were made under low noise DC and pulsed conditions. The results revealed that low electrical to optical power conversion efficiency correlates with degrade current-voltage characteristics.",

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AU - Sivaraya, S.

AU - Allsopp, D. W E

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AB - Green - orange light emitting diodes of were fabricated from InGaN/GaN wafers grown by MOVPE. Detailed measurements of the current and spectral dependence of their electroluminescence were made under low noise DC and pulsed conditions. The results revealed that low electrical to optical power conversion efficiency correlates with degrade current-voltage characteristics.

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ER -

Detailed optical and electrical characterisation of green - Orange InGaN/GaN LEDs grown by MOVPE

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