Detailed optical and electrical characterisation of green - Orange InGaN/GaN LEDs grown by MOVPE

K. Cavanagh, C. Liu, T. Martin, M. A. Hopkins, S. Sivaraya, D. W E Allsopp

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Green - orange light emitting diodes of were fabricated from InGaN/GaN wafers grown by MOVPE. Detailed measurements of the current and spectral dependence of their electroluminescence were made under low noise DC and pulsed conditions. The results revealed that low electrical to optical power conversion efficiency correlates with degrade current-voltage characteristics.

Original languageEnglish
Title of host publicationConference Proceedings - 10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014
PublisherIEEE
Pages1-4
Number of pages4
ISBN (Print)9781479954742
DOIs
Publication statusPublished - 2014
Event10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014 - Smolenice, UK United Kingdom
Duration: 20 Oct 201422 Oct 2014

Conference

Conference10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014
CountryUK United Kingdom
CitySmolenice
Period20/10/1422/10/14

Fingerprint Dive into the research topics of 'Detailed optical and electrical characterisation of green - Orange InGaN/GaN LEDs grown by MOVPE'. Together they form a unique fingerprint.

  • Cite this

    Cavanagh, K., Liu, C., Martin, T., Hopkins, M. A., Sivaraya, S., & Allsopp, D. W. E. (2014). Detailed optical and electrical characterisation of green - Orange InGaN/GaN LEDs grown by MOVPE. In Conference Proceedings - 10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014 (pp. 1-4). [6998708] IEEE. https://doi.org/10.1109/ASDAM.2014.6998708