Designing precursors for the deposition of tin sulphide thin films

T G Hibbert; A T Kana; M F Mahon; K C Molloy; L S Price; I P Parkin; M M Venter

Designing precursors for the deposition of tin sulphide thin films

T G Hibbert, A T Kana, M F Mahon, K C Molloy, L S Price, I P Parkin, M M Venter

Department of Chemistry

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2 Citations (SciVal)

Abstract

This paper reviews the work carried out by the authors over the last three years on the deposition of tin sulphide films. Particular emphasis is placed on the design and limitations of single-source precursors for these films. Simple homoleptic thiolates Sn(SR)(4) only generate tin sulphides in combination with H2S, otherwise Sn3O4 is produced by in situ formation of Sn(0) and subsequent oxidation. This problem is overcome by the use of chelating dithiolates. The decomposition of mixed ligand (RS)(2)Sn(S2CNEt2)(2) are also described, as are the synthesis and structures of mixed metal thiolates (Ph3PP)AuSSnCy3 and PhHgSSnCy3, potential precursors for ternary tin-containing sulphides.

Original language	English
Pages (from-to)	633-636
Number of pages	4
Journal	Main Group Metal Chemistry
Volume	24
Issue number	9
Publication status	Published - 2001

Bibliographical note

ID number: ISI:000171855000010

Cite this

@article{9a26fc7e069a4b07b21a1cdc2a7f11e2,

title = "Designing precursors for the deposition of tin sulphide thin films",

abstract = "This paper reviews the work carried out by the authors over the last three years on the deposition of tin sulphide films. Particular emphasis is placed on the design and limitations of single-source precursors for these films. Simple homoleptic thiolates Sn(SR)(4) only generate tin sulphides in combination with H2S, otherwise Sn3O4 is produced by in situ formation of Sn(0) and subsequent oxidation. This problem is overcome by the use of chelating dithiolates. The decomposition of mixed ligand (RS)(2)Sn(S2CNEt2)(2) are also described, as are the synthesis and structures of mixed metal thiolates (Ph3PP)AuSSnCy3 and PhHgSSnCy3, potential precursors for ternary tin-containing sulphides.",

author = "Hibbert, {T G} and Kana, {A T} and Mahon, {M F} and Molloy, {K C} and Price, {L S} and Parkin, {I P} and Venter, {M M}",

note = "ID number: ISI:000171855000010",

year = "2001",

language = "English",

volume = "24",

pages = "633--636",

journal = "Main Group Metal Chemistry",

issn = "0334-7575",

publisher = "De Gruyter",

number = "9",

}

TY - JOUR

T1 - Designing precursors for the deposition of tin sulphide thin films

AU - Hibbert, T G

AU - Kana, A T

AU - Mahon, M F

AU - Molloy, K C

AU - Price, L S

AU - Parkin, I P

AU - Venter, M M

N1 - ID number: ISI:000171855000010

PY - 2001

Y1 - 2001

N2 - This paper reviews the work carried out by the authors over the last three years on the deposition of tin sulphide films. Particular emphasis is placed on the design and limitations of single-source precursors for these films. Simple homoleptic thiolates Sn(SR)(4) only generate tin sulphides in combination with H2S, otherwise Sn3O4 is produced by in situ formation of Sn(0) and subsequent oxidation. This problem is overcome by the use of chelating dithiolates. The decomposition of mixed ligand (RS)(2)Sn(S2CNEt2)(2) are also described, as are the synthesis and structures of mixed metal thiolates (Ph3PP)AuSSnCy3 and PhHgSSnCy3, potential precursors for ternary tin-containing sulphides.

AB - This paper reviews the work carried out by the authors over the last three years on the deposition of tin sulphide films. Particular emphasis is placed on the design and limitations of single-source precursors for these films. Simple homoleptic thiolates Sn(SR)(4) only generate tin sulphides in combination with H2S, otherwise Sn3O4 is produced by in situ formation of Sn(0) and subsequent oxidation. This problem is overcome by the use of chelating dithiolates. The decomposition of mixed ligand (RS)(2)Sn(S2CNEt2)(2) are also described, as are the synthesis and structures of mixed metal thiolates (Ph3PP)AuSSnCy3 and PhHgSSnCy3, potential precursors for ternary tin-containing sulphides.

M3 - Article

SN - 0334-7575

VL - 24

SP - 633

EP - 636

JO - Main Group Metal Chemistry

JF - Main Group Metal Chemistry

IS - 9

ER -

Designing precursors for the deposition of tin sulphide thin films

Abstract

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