Designing InGaN/GaN nano-LED arrays for étendue-limited applications

Sophia Fox, Simon O'Kane, Szymon Lis, Duncan Allsopp

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

This paper presents the far field results of a study by simulation using the finite-difference time-domain (FDTD) method of vertical light emitting diode structures with an incorporated ordered nanorod array in place of the typical surface roughened region. For a dipole placed directly below the centre nanorod in the FDTD model, highly collimated light is achieved by changing the radii of the nanorods, for a fixed array pitch, which we attribute mainly to Bragg diffraction. By changing the pitch only, higher diffraction orders are observed in the far field emission as the pitch is increased and a relative increase in the directionality of emission is predicted.

Original languageEnglish
Pages (from-to)456-459
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume12
Issue number4-5
Early online date16 Feb 2015
DOIs
Publication statusPublished - Apr 2015

Keywords

  • Far-field emission profiles
  • InGaN/GaN
  • Nano-LED

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