Design and performance analysis of deep-etch air/nitride distributed Bragg reflector gratings for AlInGaN laser diodes

C. Marinelli; M. Bordovsky; L. J. Sargent; M. Gioannini; J. M. Rorison; R. V. Penty; I. H. White; P. J. Heard; M. Benyoucef; M. Kuball; G. Hasnain; T. Takeuchi; R. P. Schneider

doi:10.1063/1.1424061

Design and performance analysis of deep-etch air/nitride distributed Bragg reflector gratings for AlInGaN laser diodes

C. Marinelli, M. Bordovsky, L. J. Sargent, M. Gioannini, J. M. Rorison, R. V. Penty, I. H. White, P. J. Heard, M. Benyoucef, M. Kuball, G. Hasnain, T. Takeuchi, R. P. Schneider

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25 Citations (SciVal)

Abstract

The key parameters in the fabrication of deep-etch high-order λ/4 Bragg gratings for short-wavelength nitride-based lasers are investigated. Calculations indicate that, for an air-gap thickness of 1.73 μm and single-spot Gaussian beam profile, the reduction in grating reflectivity due to light diffraction in the air gaps is only 17% with respect to a first-order structure with 0.1 μm air gaps. Scanning electron microscopy and microphotoluminescence characterizations confirm the validity of the numerical predictions and show that the 28%-38% reflectivity obtained from prototype focused-ion-beam-etched air/nitride gratings is mainly limited by imperfections and material disorder due to etching. Improving the etching technique would, therefore, allow standard lithographic fabrication of reduced-threshold GaN lasers.

Original language	English
Pages (from-to)	4076-4078
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	25
DOIs	https://doi.org/10.1063/1.1424061
Publication status	Published - 17 Dec 2001

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Marinelli, C., Bordovsky, M., Sargent, L. J., Gioannini, M., Rorison, J. M., Penty, R. V., White, I. H., Heard, P. J., Benyoucef, M., Kuball, M., Hasnain, G., Takeuchi, T., & Schneider, R. P. (2001). Design and performance analysis of deep-etch air/nitride distributed Bragg reflector gratings for AlInGaN laser diodes. Applied Physics Letters, 79(25), 4076-4078. https://doi.org/10.1063/1.1424061

Marinelli, C, Bordovsky, M, Sargent, LJ, Gioannini, M, Rorison, JM, Penty, RV, White, IH, Heard, PJ, Benyoucef, M, Kuball, M, Hasnain, G, Takeuchi, T & Schneider, RP 2001, 'Design and performance analysis of deep-etch air/nitride distributed Bragg reflector gratings for AlInGaN laser diodes', Applied Physics Letters, vol. 79, no. 25, pp. 4076-4078. https://doi.org/10.1063/1.1424061

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title = "Design and performance analysis of deep-etch air/nitride distributed Bragg reflector gratings for AlInGaN laser diodes",

abstract = "The key parameters in the fabrication of deep-etch high-order λ/4 Bragg gratings for short-wavelength nitride-based lasers are investigated. Calculations indicate that, for an air-gap thickness of 1.73 μm and single-spot Gaussian beam profile, the reduction in grating reflectivity due to light diffraction in the air gaps is only 17% with respect to a first-order structure with 0.1 μm air gaps. Scanning electron microscopy and microphotoluminescence characterizations confirm the validity of the numerical predictions and show that the 28%-38% reflectivity obtained from prototype focused-ion-beam-etched air/nitride gratings is mainly limited by imperfections and material disorder due to etching. Improving the etching technique would, therefore, allow standard lithographic fabrication of reduced-threshold GaN lasers.",

author = "C. Marinelli and M. Bordovsky and Sargent, {L. J.} and M. Gioannini and Rorison, {J. M.} and Penty, {R. V.} and White, {I. H.} and Heard, {P. J.} and M. Benyoucef and M. Kuball and G. Hasnain and T. Takeuchi and Schneider, {R. P.}",

year = "2001",

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doi = "10.1063/1.1424061",

language = "English",

volume = "79",

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journal = "Applied Physics Letters",

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T1 - Design and performance analysis of deep-etch air/nitride distributed Bragg reflector gratings for AlInGaN laser diodes

AU - Marinelli, C.

AU - Bordovsky, M.

AU - Sargent, L. J.

AU - Gioannini, M.

AU - Rorison, J. M.

AU - Penty, R. V.

AU - White, I. H.

AU - Heard, P. J.

AU - Benyoucef, M.

AU - Kuball, M.

AU - Hasnain, G.

AU - Takeuchi, T.

AU - Schneider, R. P.

PY - 2001/12/17

Y1 - 2001/12/17

N2 - The key parameters in the fabrication of deep-etch high-order λ/4 Bragg gratings for short-wavelength nitride-based lasers are investigated. Calculations indicate that, for an air-gap thickness of 1.73 μm and single-spot Gaussian beam profile, the reduction in grating reflectivity due to light diffraction in the air gaps is only 17% with respect to a first-order structure with 0.1 μm air gaps. Scanning electron microscopy and microphotoluminescence characterizations confirm the validity of the numerical predictions and show that the 28%-38% reflectivity obtained from prototype focused-ion-beam-etched air/nitride gratings is mainly limited by imperfections and material disorder due to etching. Improving the etching technique would, therefore, allow standard lithographic fabrication of reduced-threshold GaN lasers.

AB - The key parameters in the fabrication of deep-etch high-order λ/4 Bragg gratings for short-wavelength nitride-based lasers are investigated. Calculations indicate that, for an air-gap thickness of 1.73 μm and single-spot Gaussian beam profile, the reduction in grating reflectivity due to light diffraction in the air gaps is only 17% with respect to a first-order structure with 0.1 μm air gaps. Scanning electron microscopy and microphotoluminescence characterizations confirm the validity of the numerical predictions and show that the 28%-38% reflectivity obtained from prototype focused-ion-beam-etched air/nitride gratings is mainly limited by imperfections and material disorder due to etching. Improving the etching technique would, therefore, allow standard lithographic fabrication of reduced-threshold GaN lasers.

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ER -

Design and performance analysis of deep-etch air/nitride distributed Bragg reflector gratings for AlInGaN laser diodes

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