Design and performance analysis of deep-etch air/nitride distributed Bragg reflector gratings for AlInGaN laser diodes

C. Marinelli, M. Bordovsky, L. J. Sargent, M. Gioannini, J. M. Rorison, R. V. Penty, I. H. White, P. J. Heard, M. Benyoucef, M. Kuball, G. Hasnain, T. Takeuchi, R. P. Schneider

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Abstract

The key parameters in the fabrication of deep-etch high-order λ/4 Bragg gratings for short-wavelength nitride-based lasers are investigated. Calculations indicate that, for an air-gap thickness of 1.73 μm and single-spot Gaussian beam profile, the reduction in grating reflectivity due to light diffraction in the air gaps is only 17% with respect to a first-order structure with 0.1 μm air gaps. Scanning electron microscopy and microphotoluminescence characterizations confirm the validity of the numerical predictions and show that the 28%-38% reflectivity obtained from prototype focused-ion-beam-etched air/nitride gratings is mainly limited by imperfections and material disorder due to etching. Improving the etching technique would, therefore, allow standard lithographic fabrication of reduced-threshold GaN lasers.

Original languageEnglish
Pages (from-to)4076-4078
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number25
DOIs
Publication statusPublished - 17 Dec 2001

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Marinelli, C., Bordovsky, M., Sargent, L. J., Gioannini, M., Rorison, J. M., Penty, R. V., ... Schneider, R. P. (2001). Design and performance analysis of deep-etch air/nitride distributed Bragg reflector gratings for AlInGaN laser diodes. Applied Physics Letters, 79(25), 4076-4078. https://doi.org/10.1063/1.1424061