Deposition of tin sulfide thin films from tin(IV) thiolate precursors

G Barone, T G Hibbert, M F Mahon, K C Molloy, L S Price, I P Parkin, A M E Hardy, M N Field

Research output: Contribution to journalArticle

65 Citations (Scopus)

Abstract

AACVD (aerosol-assisted chemical vapour deposition) using (PhS)(4)Sn as precursor leads to the deposition of Sn3O4 in the absence of H2S and tin sulfides when H2S is used as co-reactant. At 450 degreesC the film deposited consists of mainly SnS2 while at 500 degreesC SnS is the dominant component. The mechanism of decomposition of (PhS)(4)Sn is discussed and the structure of the precursor presented.
Original languageEnglish
Pages (from-to)464-468
Number of pages5
JournalJournal of Materials Chemistry
Volume11
Issue number2
Publication statusPublished - 2001

Fingerprint Dive into the research topics of 'Deposition of tin sulfide thin films from tin(IV) thiolate precursors'. Together they form a unique fingerprint.

  • Cite this

    Barone, G., Hibbert, T. G., Mahon, M. F., Molloy, K. C., Price, L. S., Parkin, I. P., Hardy, A. M. E., & Field, M. N. (2001). Deposition of tin sulfide thin films from tin(IV) thiolate precursors. Journal of Materials Chemistry, 11(2), 464-468.