Deposition of tin sulfide thin films from tin(IV) thiolate precursors

G Barone; T G Hibbert; M F Mahon; K C Molloy; L S Price; I P Parkin; A M E Hardy; M N Field

doi:10.1039/b005888m

Deposition of tin sulfide thin films from tin(IV) thiolate precursors

G Barone, T G Hibbert, M F Mahon, K C Molloy, L S Price, I P Parkin, A M E Hardy, M N Field

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

84 Citations (SciVal)

Abstract

AACVD (aerosol-assisted chemical vapour deposition) using (PhS)(4)Sn as precursor leads to the deposition of Sn3O4 in the absence of H2S and tin sulfides when H2S is used as co-reactant. At 450 degreesC the film deposited consists of mainly SnS2 while at 500 degreesC SnS is the dominant component. The mechanism of decomposition of (PhS)(4)Sn is discussed and the structure of the precursor presented.

Original language	English
Pages (from-to)	464-468
Number of pages	5
Journal	Journal of Materials Chemistry
Volume	11
Issue number	2
DOIs	https://doi.org/10.1039/b005888m
Publication status	Published - 2001

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ID number: ISI:000167139700039

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title = "Deposition of tin sulfide thin films from tin(IV) thiolate precursors",

abstract = "AACVD (aerosol-assisted chemical vapour deposition) using (PhS)(4)Sn as precursor leads to the deposition of Sn3O4 in the absence of H2S and tin sulfides when H2S is used as co-reactant. At 450 degreesC the film deposited consists of mainly SnS2 while at 500 degreesC SnS is the dominant component. The mechanism of decomposition of (PhS)(4)Sn is discussed and the structure of the precursor presented.",

author = "G Barone and Hibbert, \{T G\} and Mahon, \{M F\} and Molloy, \{K C\} and Price, \{L S\} and Parkin, \{I P\} and Hardy, \{A M E\} and Field, \{M N\}",

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journal = "Journal of Materials Chemistry",

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publisher = "Royal Society of Chemistry",

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T1 - Deposition of tin sulfide thin films from tin(IV) thiolate precursors

AU - Barone, G

AU - Hibbert, T G

AU - Mahon, M F

AU - Molloy, K C

AU - Price, L S

AU - Parkin, I P

AU - Hardy, A M E

AU - Field, M N

N1 - ID number: ISI:000167139700039

PY - 2001

Y1 - 2001

N2 - AACVD (aerosol-assisted chemical vapour deposition) using (PhS)(4)Sn as precursor leads to the deposition of Sn3O4 in the absence of H2S and tin sulfides when H2S is used as co-reactant. At 450 degreesC the film deposited consists of mainly SnS2 while at 500 degreesC SnS is the dominant component. The mechanism of decomposition of (PhS)(4)Sn is discussed and the structure of the precursor presented.

AB - AACVD (aerosol-assisted chemical vapour deposition) using (PhS)(4)Sn as precursor leads to the deposition of Sn3O4 in the absence of H2S and tin sulfides when H2S is used as co-reactant. At 450 degreesC the film deposited consists of mainly SnS2 while at 500 degreesC SnS is the dominant component. The mechanism of decomposition of (PhS)(4)Sn is discussed and the structure of the precursor presented.

UR - https://www.scopus.com/pages/publications/0035124301

U2 - 10.1039/b005888m

DO - 10.1039/b005888m

M3 - Article

SN - 0959-9428

VL - 11

SP - 464

EP - 468

JO - Journal of Materials Chemistry

JF - Journal of Materials Chemistry

IS - 2

ER -

Deposition of tin sulfide thin films from tin(IV) thiolate precursors

Abstract

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