Deposition of tin sulfide thin films from tin(IV) thiolate precursors

G Barone; T G Hibbert; M F Mahon; K C Molloy; L S Price; I P Parkin; A M E Hardy; M N Field

Deposition of tin sulfide thin films from tin(IV) thiolate precursors

G Barone, T G Hibbert, M F Mahon, K C Molloy, L S Price, I P Parkin, A M E Hardy, M N Field

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

80 Citations (SciVal)

Abstract

AACVD (aerosol-assisted chemical vapour deposition) using (PhS)(4)Sn as precursor leads to the deposition of Sn3O4 in the absence of H2S and tin sulfides when H2S is used as co-reactant. At 450 degreesC the film deposited consists of mainly SnS2 while at 500 degreesC SnS is the dominant component. The mechanism of decomposition of (PhS)(4)Sn is discussed and the structure of the precursor presented.

Original language	English
Pages (from-to)	464-468
Number of pages	5
Journal	Journal of Materials Chemistry
Volume	11
Issue number	2
Publication status	Published - 2001

Bibliographical note

ID number: ISI:000167139700039

Cite this

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title = "Deposition of tin sulfide thin films from tin(IV) thiolate precursors",

abstract = "AACVD (aerosol-assisted chemical vapour deposition) using (PhS)(4)Sn as precursor leads to the deposition of Sn3O4 in the absence of H2S and tin sulfides when H2S is used as co-reactant. At 450 degreesC the film deposited consists of mainly SnS2 while at 500 degreesC SnS is the dominant component. The mechanism of decomposition of (PhS)(4)Sn is discussed and the structure of the precursor presented.",

author = "G Barone and Hibbert, {T G} and Mahon, {M F} and Molloy, {K C} and Price, {L S} and Parkin, {I P} and Hardy, {A M E} and Field, {M N}",

note = "ID number: ISI:000167139700039",

year = "2001",

language = "English",

volume = "11",

pages = "464--468",

journal = "Journal of Materials Chemistry",

issn = "0959-9428",

publisher = "Royal Society of Chemistry",

number = "2",

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TY - JOUR

T1 - Deposition of tin sulfide thin films from tin(IV) thiolate precursors

AU - Barone, G

AU - Hibbert, T G

AU - Mahon, M F

AU - Molloy, K C

AU - Price, L S

AU - Parkin, I P

AU - Hardy, A M E

AU - Field, M N

N1 - ID number: ISI:000167139700039

PY - 2001

Y1 - 2001

N2 - AACVD (aerosol-assisted chemical vapour deposition) using (PhS)(4)Sn as precursor leads to the deposition of Sn3O4 in the absence of H2S and tin sulfides when H2S is used as co-reactant. At 450 degreesC the film deposited consists of mainly SnS2 while at 500 degreesC SnS is the dominant component. The mechanism of decomposition of (PhS)(4)Sn is discussed and the structure of the precursor presented.

AB - AACVD (aerosol-assisted chemical vapour deposition) using (PhS)(4)Sn as precursor leads to the deposition of Sn3O4 in the absence of H2S and tin sulfides when H2S is used as co-reactant. At 450 degreesC the film deposited consists of mainly SnS2 while at 500 degreesC SnS is the dominant component. The mechanism of decomposition of (PhS)(4)Sn is discussed and the structure of the precursor presented.

M3 - Article

SN - 0959-9428

VL - 11

SP - 464

EP - 468

JO - Journal of Materials Chemistry

JF - Journal of Materials Chemistry

IS - 2

ER -

Deposition of tin sulfide thin films from tin(IV) thiolate precursors

Abstract

Bibliographical note

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