Deposition of tin sulfide thin films from novel, volatile (fluoroalkythiolato)tin(IV) precursors

T G Hibbert; M F Mahon; K C Molloy; L S Price; I P Parkin

doi:10.1039/b005863g

Deposition of tin sulfide thin films from novel, volatile (fluoroalkythiolato)tin(IV) precursors

T G Hibbert
, M F Mahon
, K C Molloy
, L S Price
, I P Parkin

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

72 Citations (SciVal)

Abstract

Novel, volatile (fluoroalkylthiolato)tin(iv) precursors have been synthesised and (CF3CH2S)(4)Sn used to deposit tin sulfide films under APCVD (atmospheric pressure chemical vapour deposition) conditions. H2S is, however, required as co-reactant. Films deposited at 300-400 degreesC are composed of sulfur-deficient SnS2, films deposited at 450 and 500 degreesC comprise the sesquisulfide, Sn2S3, and the films deposited at 550 or 600 degreesC are sulfur-deficient SnS. The structure of [CF3(CF2)(5)CH2CH2S](4)Sn is also reported.

Original language	English
Pages (from-to)	469-473
Number of pages	5
Journal	Journal of Materials Chemistry
Volume	11
Issue number	2
DOIs	https://doi.org/10.1039/b005863g
Publication status	Published - 2001

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ID number: ISI:000167139700040

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title = "Deposition of tin sulfide thin films from novel, volatile (fluoroalkythiolato)tin(IV) precursors",

abstract = "Novel, volatile (fluoroalkylthiolato)tin(iv) precursors have been synthesised and (CF3CH2S)(4)Sn used to deposit tin sulfide films under APCVD (atmospheric pressure chemical vapour deposition) conditions. H2S is, however, required as co-reactant. Films deposited at 300-400 degreesC are composed of sulfur-deficient SnS2, films deposited at 450 and 500 degreesC comprise the sesquisulfide, Sn2S3, and the films deposited at 550 or 600 degreesC are sulfur-deficient SnS. The structure of [CF3(CF2)(5)CH2CH2S](4)Sn is also reported.",

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year = "2001",

doi = "10.1039/b005863g",

language = "English",

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pages = "469--473",

journal = "Journal of Materials Chemistry",

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publisher = "Royal Society of Chemistry",

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T1 - Deposition of tin sulfide thin films from novel, volatile (fluoroalkythiolato)tin(IV) precursors

AU - Hibbert, T G

AU - Mahon, M F

AU - Molloy, K C

AU - Price, L S

AU - Parkin, I P

N1 - ID number: ISI:000167139700040

PY - 2001

Y1 - 2001

N2 - Novel, volatile (fluoroalkylthiolato)tin(iv) precursors have been synthesised and (CF3CH2S)(4)Sn used to deposit tin sulfide films under APCVD (atmospheric pressure chemical vapour deposition) conditions. H2S is, however, required as co-reactant. Films deposited at 300-400 degreesC are composed of sulfur-deficient SnS2, films deposited at 450 and 500 degreesC comprise the sesquisulfide, Sn2S3, and the films deposited at 550 or 600 degreesC are sulfur-deficient SnS. The structure of [CF3(CF2)(5)CH2CH2S](4)Sn is also reported.

AB - Novel, volatile (fluoroalkylthiolato)tin(iv) precursors have been synthesised and (CF3CH2S)(4)Sn used to deposit tin sulfide films under APCVD (atmospheric pressure chemical vapour deposition) conditions. H2S is, however, required as co-reactant. Films deposited at 300-400 degreesC are composed of sulfur-deficient SnS2, films deposited at 450 and 500 degreesC comprise the sesquisulfide, Sn2S3, and the films deposited at 550 or 600 degreesC are sulfur-deficient SnS. The structure of [CF3(CF2)(5)CH2CH2S](4)Sn is also reported.

U2 - 10.1039/b005863g

DO - 10.1039/b005863g

M3 - Article

SN - 0959-9428

VL - 11

SP - 469

EP - 473

JO - Journal of Materials Chemistry

JF - Journal of Materials Chemistry

IS - 2

ER -

Deposition of tin sulfide thin films from novel, volatile (fluoroalkythiolato)tin(IV) precursors

Abstract

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