Deposition of tin sulfide thin films from novel, volatile (fluoroalkythiolato)tin(IV) precursors

T G Hibbert, M F Mahon, K C Molloy, L S Price, I P Parkin

Research output: Contribution to journalArticle

55 Citations (Scopus)

Abstract

Novel, volatile (fluoroalkylthiolato)tin(iv) precursors have been synthesised and (CF3CH2S)(4)Sn used to deposit tin sulfide films under APCVD (atmospheric pressure chemical vapour deposition) conditions. H2S is, however, required as co-reactant. Films deposited at 300-400 degreesC are composed of sulfur-deficient SnS2, films deposited at 450 and 500 degreesC comprise the sesquisulfide, Sn2S3, and the films deposited at 550 or 600 degreesC are sulfur-deficient SnS. The structure of [CF3(CF2)(5)CH2CH2S](4)Sn is also reported.
Original languageEnglish
Pages (from-to)469-473
Number of pages5
JournalJournal of Materials Chemistry
Volume11
Issue number2
Publication statusPublished - 2001

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