Novel, volatile (fluoroalkylthiolato)tin(iv) precursors have been synthesised and (CF3CH2S)(4)Sn used to deposit tin sulfide films under APCVD (atmospheric pressure chemical vapour deposition) conditions. H2S is, however, required as co-reactant. Films deposited at 300-400 degreesC are composed of sulfur-deficient SnS2, films deposited at 450 and 500 degreesC comprise the sesquisulfide, Sn2S3, and the films deposited at 550 or 600 degreesC are sulfur-deficient SnS. The structure of [CF3(CF2)(5)CH2CH2S](4)Sn is also reported.
|Number of pages||5|
|Journal||Journal of Materials Chemistry|
|Publication status||Published - 2001|
Hibbert, T. G., Mahon, M. F., Molloy, K. C., Price, L. S., & Parkin, I. P. (2001). Deposition of tin sulfide thin films from novel, volatile (fluoroalkythiolato)tin(IV) precursors. Journal of Materials Chemistry, 11(2), 469-473.