Deposition of antimony and antimony oxides by MOCVD

C P Myers, P W Haycock, M Pichot, G A Horley, K C Molloy, S A Rushworth, L M Smith

Research output: Contribution to journalArticlepeer-review

8 Citations (SciVal)

Abstract

Thin films of antimony and antimony oxides have been deposited by metal-organic (MO) CVD from a variety of metal-organic precursors at temperatures in the range 150-650 degreesC under both atmospheric and reduced pressure. Below 400 degreesC, uniform films of pure senarmontite (Sb2O3) with a microstructure and crystal texture that was strongly dependent on the deposition temperature, were deposited. Above 400degreesC, mixed phase material was produced, with isolated crystallites of pure antimony becoming the dominant phase as the temperature was increased. The maximum temperature at which pure senarmontite could be formed was higher for larger precursor ligands. Addition of oxygen to the precursor flow led to the production of higher antimony oxidation states.
Original languageEnglish
Pages (from-to)35-44
Number of pages10
JournalChemical Vapor Deposition
Volume10
Issue number1
DOIs
Publication statusPublished - 2004

Bibliographical note

ID number: ISI:000188863400007

Fingerprint

Dive into the research topics of 'Deposition of antimony and antimony oxides by MOCVD'. Together they form a unique fingerprint.

Cite this