Deposition and characterisation of a porous Sn(IV) semiconductor nanofilm on boron-doped diamond

Michael Hyde; Andrew J. Saterlay; Shelley J. Wilkins; John S. Foord; Richard G. Compton; Frank Marken

doi:10.1007/s100080100217

Deposition and characterisation of a porous Sn(IV) semiconductor nanofilm on boron-doped diamond

Michael Hyde, Andrew J. Saterlay, Shelley J. Wilkins, John S. Foord, Richard G. Compton, Frank Marken

Research output: Contribution to journal › Article › peer-review

17 Citations (SciVal)

Abstract

Nanofilm deposits of a porous Sn(IV) oxide are formed by anodic electrodeposition on a polished boron-doped diamond electrode immersed in an aqueous Sn²⁺ solution. Mechanically and electrochemically stable deposits of 10-15 nm thickness are formed irrespective of the Sn²⁺ concentration and mass-transport enhancement by power ultrasound. Atomic force microscopy images indicate the presence of a smooth and noncrystalline film, which is stable under ambient conditions. n-type semiconducting characteristics are observed for the aqueous solution redox couples Fe(CN)₆^3-/4- and Ru(NH₃)₆^3+/2+. However, preliminary results from voltammetric experiments indicate that the small and neutral organic molecule N,N,N′,N′-tetramethylphenylenediamine is able to diffuse through the porous film to undergo oxidation directly at the surface of the boron-doped diamond electrode.

Original language	English
Pages (from-to)	183-187
Number of pages	5
Journal	Journal of Solid State Electrochemistry
Volume	6
Issue number	3
DOIs	https://doi.org/10.1007/s100080100217
Publication status	Published - 1 Mar 2002

Keywords

Boron-doped diamond
Porous film Nanofilm
Semiconductor
Voltammetry

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Electrochemistry
Electrical and Electronic Engineering

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10.1007/s100080100217

Cite this

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title = "Deposition and characterisation of a porous Sn(IV) semiconductor nanofilm on boron-doped diamond",

abstract = "Nanofilm deposits of a porous Sn(IV) oxide are formed by anodic electrodeposition on a polished boron-doped diamond electrode immersed in an aqueous Sn2+ solution. Mechanically and electrochemically stable deposits of 10-15 nm thickness are formed irrespective of the Sn2+ concentration and mass-transport enhancement by power ultrasound. Atomic force microscopy images indicate the presence of a smooth and noncrystalline film, which is stable under ambient conditions. n-type semiconducting characteristics are observed for the aqueous solution redox couples Fe(CN)63-/4- and Ru(NH3)63+/2+. However, preliminary results from voltammetric experiments indicate that the small and neutral organic molecule N,N,N′,N′-tetramethylphenylenediamine is able to diffuse through the porous film to undergo oxidation directly at the surface of the boron-doped diamond electrode.",

keywords = "Boron-doped diamond, Porous film Nanofilm, Semiconductor, Voltammetry",

author = "Michael Hyde and Saterlay, {Andrew J.} and Wilkins, {Shelley J.} and Foord, {John S.} and Compton, {Richard G.} and Frank Marken",

year = "2002",

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doi = "10.1007/s100080100217",

language = "English",

volume = "6",

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journal = "Journal of Solid State Electrochemistry",

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T1 - Deposition and characterisation of a porous Sn(IV) semiconductor nanofilm on boron-doped diamond

AU - Hyde, Michael

AU - Saterlay, Andrew J.

AU - Wilkins, Shelley J.

AU - Foord, John S.

AU - Compton, Richard G.

AU - Marken, Frank

PY - 2002/3/1

Y1 - 2002/3/1

N2 - Nanofilm deposits of a porous Sn(IV) oxide are formed by anodic electrodeposition on a polished boron-doped diamond electrode immersed in an aqueous Sn2+ solution. Mechanically and electrochemically stable deposits of 10-15 nm thickness are formed irrespective of the Sn2+ concentration and mass-transport enhancement by power ultrasound. Atomic force microscopy images indicate the presence of a smooth and noncrystalline film, which is stable under ambient conditions. n-type semiconducting characteristics are observed for the aqueous solution redox couples Fe(CN)63-/4- and Ru(NH3)63+/2+. However, preliminary results from voltammetric experiments indicate that the small and neutral organic molecule N,N,N′,N′-tetramethylphenylenediamine is able to diffuse through the porous film to undergo oxidation directly at the surface of the boron-doped diamond electrode.

AB - Nanofilm deposits of a porous Sn(IV) oxide are formed by anodic electrodeposition on a polished boron-doped diamond electrode immersed in an aqueous Sn2+ solution. Mechanically and electrochemically stable deposits of 10-15 nm thickness are formed irrespective of the Sn2+ concentration and mass-transport enhancement by power ultrasound. Atomic force microscopy images indicate the presence of a smooth and noncrystalline film, which is stable under ambient conditions. n-type semiconducting characteristics are observed for the aqueous solution redox couples Fe(CN)63-/4- and Ru(NH3)63+/2+. However, preliminary results from voltammetric experiments indicate that the small and neutral organic molecule N,N,N′,N′-tetramethylphenylenediamine is able to diffuse through the porous film to undergo oxidation directly at the surface of the boron-doped diamond electrode.

KW - Boron-doped diamond

KW - Porous film Nanofilm

KW - Semiconductor

KW - Voltammetry

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DO - 10.1007/s100080100217

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SP - 183

EP - 187

JO - Journal of Solid State Electrochemistry

JF - Journal of Solid State Electrochemistry

IS - 3

ER -

Deposition and characterisation of a porous Sn(IV) semiconductor nanofilm on boron-doped diamond

Abstract

Keywords

ASJC Scopus subject areas

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