Deposition and characterisation of a porous Sn(IV) semiconductor nanofilm on boron-doped diamond

Michael Hyde, Andrew J. Saterlay, Shelley J. Wilkins, John S. Foord, Richard G. Compton, Frank Marken

Research output: Contribution to journalArticlepeer-review

17 Citations (SciVal)


Nanofilm deposits of a porous Sn(IV) oxide are formed by anodic electrodeposition on a polished boron-doped diamond electrode immersed in an aqueous Sn2+ solution. Mechanically and electrochemically stable deposits of 10-15 nm thickness are formed irrespective of the Sn2+ concentration and mass-transport enhancement by power ultrasound. Atomic force microscopy images indicate the presence of a smooth and noncrystalline film, which is stable under ambient conditions. n-type semiconducting characteristics are observed for the aqueous solution redox couples Fe(CN)63-/4- and Ru(NH3)63+/2+. However, preliminary results from voltammetric experiments indicate that the small and neutral organic molecule N,N,N′,N′-tetramethylphenylenediamine is able to diffuse through the porous film to undergo oxidation directly at the surface of the boron-doped diamond electrode.

Original languageEnglish
Pages (from-to)183-187
Number of pages5
JournalJournal of Solid State Electrochemistry
Issue number3
Publication statusPublished - 1 Mar 2002


  • Boron-doped diamond
  • Porous film Nanofilm
  • Semiconductor
  • Voltammetry

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrochemistry
  • Electrical and Electronic Engineering


Dive into the research topics of 'Deposition and characterisation of a porous Sn(IV) semiconductor nanofilm on boron-doped diamond'. Together they form a unique fingerprint.

Cite this