Demonstration of polarisation rotation gate in GaAs/AlGaAs multiquantum well waveguides

P. A. Snow; I. E. Day; I. H. White; R. V. Penty; H. K. Tsang; R. S. Grant; Z. Su; W. Sibbett; J. B.D. Soole; H. P. Leblanc; A. S. Gozdz; N. C. Andreadakis; C. Caneau

doi:10.1049/el:19921512

Demonstration of polarisation rotation gate in GaAs/AlGaAs multiquantum well waveguides

P. A. Snow, I. E. Day, I. H. White, R. V. Penty, H. K. Tsang, R. S. Grant, Z. Su, W. Sibbett, J. B.D. Soole, H. P. Leblanc, A. S. Gozdz, N. C. Andreadakis, C. Caneau

Research output: Contribution to journal › Article › peer-review

Abstract

Optical switching of femtosecond pulses is achieved at 1.5µm using a refractive nonlinearity in a GaAs/AlGaAs MQW waveguide birefringent gate. The switching mechanism is demonstrated with a maximum throughput of 54% of the available transmitted power corresponding to an effective phase shift between polarisations of 90°. Normalised transmission is increased by a factor of 44 by increasing the peak coupled pump power from 1 to 330 W.

Original language	English
Pages (from-to)	2346-2348
Number of pages	3
Journal	Electronics Letters
Volume	28
Issue number	25
DOIs	https://doi.org/10.1049/el:19921512
Publication status	Published - 1 Jan 1992

Keywords

Nonlinear optics
Optical switching
Semiconductor devices and materials
Waveguides

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19921512

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title = "Demonstration of polarisation rotation gate in GaAs/AlGaAs multiquantum well waveguides",

abstract = "Optical switching of femtosecond pulses is achieved at 1.5µm using a refractive nonlinearity in a GaAs/AlGaAs MQW waveguide birefringent gate. The switching mechanism is demonstrated with a maximum throughput of 54% of the available transmitted power corresponding to an effective phase shift between polarisations of 90°. Normalised transmission is increased by a factor of 44 by increasing the peak coupled pump power from 1 to 330 W.",

keywords = "Nonlinear optics, Optical switching, Semiconductor devices and materials, Waveguides",

author = "Snow, {P. A.} and Day, {I. E.} and White, {I. H.} and Penty, {R. V.} and Tsang, {H. K.} and Grant, {R. S.} and Z. Su and W. Sibbett and Soole, {J. B.D.} and Leblanc, {H. P.} and Gozdz, {A. S.} and Andreadakis, {N. C.} and C. Caneau",

year = "1992",

month = jan,

day = "1",

doi = "10.1049/el:19921512",

language = "English",

volume = "28",

pages = "2346--2348",

journal = "Electronics Letters",

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publisher = "John Wiley & Sons",

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TY - JOUR

T1 - Demonstration of polarisation rotation gate in GaAs/AlGaAs multiquantum well waveguides

AU - Snow, P. A.

AU - Day, I. E.

AU - White, I. H.

AU - Penty, R. V.

AU - Tsang, H. K.

AU - Grant, R. S.

AU - Su, Z.

AU - Sibbett, W.

AU - Soole, J. B.D.

AU - Leblanc, H. P.

AU - Gozdz, A. S.

AU - Andreadakis, N. C.

AU - Caneau, C.

PY - 1992/1/1

Y1 - 1992/1/1

N2 - Optical switching of femtosecond pulses is achieved at 1.5µm using a refractive nonlinearity in a GaAs/AlGaAs MQW waveguide birefringent gate. The switching mechanism is demonstrated with a maximum throughput of 54% of the available transmitted power corresponding to an effective phase shift between polarisations of 90°. Normalised transmission is increased by a factor of 44 by increasing the peak coupled pump power from 1 to 330 W.

AB - Optical switching of femtosecond pulses is achieved at 1.5µm using a refractive nonlinearity in a GaAs/AlGaAs MQW waveguide birefringent gate. The switching mechanism is demonstrated with a maximum throughput of 54% of the available transmitted power corresponding to an effective phase shift between polarisations of 90°. Normalised transmission is increased by a factor of 44 by increasing the peak coupled pump power from 1 to 330 W.

KW - Nonlinear optics

KW - Optical switching

KW - Semiconductor devices and materials

KW - Waveguides

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U2 - 10.1049/el:19921512

DO - 10.1049/el:19921512

M3 - Article

AN - SCOPUS:0027111009

SN - 0013-5194

VL - 28

SP - 2346

EP - 2348

JO - Electronics Letters

JF - Electronics Letters

IS - 25

ER -

Demonstration of polarisation rotation gate in GaAs/AlGaAs multiquantum well waveguides

Abstract

Keywords

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