Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device

Y Gong; M Tapajna; S Bakalova; Y Zhang; J H Edgar; M Dudley; Margaret Hopkins; M Kuball

doi:10.1063/1.3443712

Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device

Y Gong, M Tapajna, S Bakalova, Y Zhang, J H Edgar, M Dudley, Margaret Hopkins, M Kuball

Department of Electronic & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

15 Citations (SciVal)

Abstract

B12As2/SiC pn heterojunction diodes based on the radiation-hard B12As2 deposited on (0001) n-type 4H-SiC via chemical vapor deposition were demonstrated. The diodes exhibit good rectifying behavior with an ideality factor of 1.8 and a leakage current as low as 9.4 x 10(-6) A/cm(2). Capacitance-voltage measurements using a two-frequency technique showed a hole concentration of similar to 1.8-2.0 x 10(17) cm(-3) in B12As2 with a slight increase near the interface due to the presence of an interfacial layer to accommodate lattice mismatch. Band offsets between the B12As2 and SiC were estimated to be similar to 1.06 eV and 1.12 eV for conduction band and valance band, respectively.

Original language	English
Article number	223506
Journal	Applied Physics Letters
Volume	96
Issue number	22
DOIs	https://doi.org/10.1063/1.3443712
Publication status	Published - 31 May 2010

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title = "Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device",

abstract = "B12As2/SiC pn heterojunction diodes based on the radiation-hard B12As2 deposited on (0001) n-type 4H-SiC via chemical vapor deposition were demonstrated. The diodes exhibit good rectifying behavior with an ideality factor of 1.8 and a leakage current as low as 9.4 x 10(-6) A/cm(2). Capacitance-voltage measurements using a two-frequency technique showed a hole concentration of similar to 1.8-2.0 x 10(17) cm(-3) in B12As2 with a slight increase near the interface due to the presence of an interfacial layer to accommodate lattice mismatch. Band offsets between the B12As2 and SiC were estimated to be similar to 1.06 eV and 1.12 eV for conduction band and valance band, respectively.",

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T1 - Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device

AU - Gong, Y

AU - Tapajna, M

AU - Bakalova, S

AU - Zhang, Y

AU - Edgar, J H

AU - Dudley, M

AU - Hopkins, Margaret

AU - Kuball, M

PY - 2010/5/31

Y1 - 2010/5/31

N2 - B12As2/SiC pn heterojunction diodes based on the radiation-hard B12As2 deposited on (0001) n-type 4H-SiC via chemical vapor deposition were demonstrated. The diodes exhibit good rectifying behavior with an ideality factor of 1.8 and a leakage current as low as 9.4 x 10(-6) A/cm(2). Capacitance-voltage measurements using a two-frequency technique showed a hole concentration of similar to 1.8-2.0 x 10(17) cm(-3) in B12As2 with a slight increase near the interface due to the presence of an interfacial layer to accommodate lattice mismatch. Band offsets between the B12As2 and SiC were estimated to be similar to 1.06 eV and 1.12 eV for conduction band and valance band, respectively.

AB - B12As2/SiC pn heterojunction diodes based on the radiation-hard B12As2 deposited on (0001) n-type 4H-SiC via chemical vapor deposition were demonstrated. The diodes exhibit good rectifying behavior with an ideality factor of 1.8 and a leakage current as low as 9.4 x 10(-6) A/cm(2). Capacitance-voltage measurements using a two-frequency technique showed a hole concentration of similar to 1.8-2.0 x 10(17) cm(-3) in B12As2 with a slight increase near the interface due to the presence of an interfacial layer to accommodate lattice mismatch. Band offsets between the B12As2 and SiC were estimated to be similar to 1.06 eV and 1.12 eV for conduction band and valance band, respectively.

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DO - 10.1063/1.3443712

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VL - 96

JO - Applied Physics Letters

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Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device

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