Defect densities in tetrahedrally bonded amorphous carbon deduced by junction capacitance techniques

KC Palinginis; Y Lubianiker; JD Cohen; Adelina Ilie; B Kleinsorge; WI Milne

doi:10.1063/1.123074

Defect densities in tetrahedrally bonded amorphous carbon deduced by junction capacitance techniques

KC Palinginis, Y Lubianiker, JD Cohen, Adelina Ilie, B Kleinsorge, WI Milne

Department of Physics

Research output: Contribution to journal › Article › peer-review

10 Citations (SciVal)

Abstract

Junction capacitance measurements performed on tetrahedrally bonded amorphous carbon (ta-C)/crystalline-Si (c-Si) heterostructures are used to deduce the defect density in thin ta-C films. Using the drive level capacitance profiling technique, we determine a homogeneous defect density of 6±1.5×1017 cm−3 in the undoped (p-type) ta-C films and one order of magnitude larger in the nitrogen-doped (n-type) films. Admittance measurements reveal defect states at the ta-C/c-Si interface with a density exceeding 2×1012 cm−2

Original language	English
Pages (from-to)	371 - 373
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	3
DOIs	https://doi.org/10.1063/1.123074
Publication status	Published - 1999

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title = "Defect densities in tetrahedrally bonded amorphous carbon deduced by junction capacitance techniques",

abstract = "Junction capacitance measurements performed on tetrahedrally bonded amorphous carbon (ta-C)/crystalline-Si (c-Si) heterostructures are used to deduce the defect density in thin ta-C films. Using the drive level capacitance profiling technique, we determine a homogeneous defect density of 6±1.5×1017 cm−3 in the undoped (p-type) ta-C films and one order of magnitude larger in the nitrogen-doped (n-type) films. Admittance measurements reveal defect states at the ta-C/c-Si interface with a density exceeding 2×1012 cm−2",

author = "KC Palinginis and Y Lubianiker and JD Cohen and Adelina Ilie and B Kleinsorge and WI Milne",

year = "1999",

doi = "10.1063/1.123074",

language = "English",

volume = "74",

pages = "371 -- 373",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "3",

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T1 - Defect densities in tetrahedrally bonded amorphous carbon deduced by junction capacitance techniques

AU - Palinginis, KC

AU - Lubianiker, Y

AU - Cohen, JD

AU - Ilie, Adelina

AU - Kleinsorge, B

AU - Milne, WI

PY - 1999

Y1 - 1999

N2 - Junction capacitance measurements performed on tetrahedrally bonded amorphous carbon (ta-C)/crystalline-Si (c-Si) heterostructures are used to deduce the defect density in thin ta-C films. Using the drive level capacitance profiling technique, we determine a homogeneous defect density of 6±1.5×1017 cm−3 in the undoped (p-type) ta-C films and one order of magnitude larger in the nitrogen-doped (n-type) films. Admittance measurements reveal defect states at the ta-C/c-Si interface with a density exceeding 2×1012 cm−2

AB - Junction capacitance measurements performed on tetrahedrally bonded amorphous carbon (ta-C)/crystalline-Si (c-Si) heterostructures are used to deduce the defect density in thin ta-C films. Using the drive level capacitance profiling technique, we determine a homogeneous defect density of 6±1.5×1017 cm−3 in the undoped (p-type) ta-C films and one order of magnitude larger in the nitrogen-doped (n-type) films. Admittance measurements reveal defect states at the ta-C/c-Si interface with a density exceeding 2×1012 cm−2

UR - http://dx.doi.org/10.1063/1.123074

UR - https://www.scopus.com/pages/publications/0001395496

U2 - 10.1063/1.123074

DO - 10.1063/1.123074

M3 - Article

SN - 0003-6951

VL - 74

SP - 371

EP - 373

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

ER -

Defect densities in tetrahedrally bonded amorphous carbon deduced by junction capacitance techniques

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