CVD of pure copper films from novel iso-ureate complexes

Alexander M. Willcocks, Thomas Pugh, Jeff A. Hamilton, Andrew L. Johnson, Stephen P. Richards, Andrew J. Kingsley

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We report the synthesis and characterisation of a new family of copper(i) metal precursors based around alkoxy-N,N′-di-alkyl-ureate ligands, and their subsequent application in the production of pure copper thin films. The molecular structure of the complexes bis-copper(i)(methoxy-N,N′-di- isopropylureate) (1) and bis-copper(i)(methoxy-N,N′-di-cyclohexylureate) (5) are described, as determined by single crystal X-ray diffraction analysis. Thermogravimetric analysis of the complexes highlighted complex 1 as a possible copper CVD precursor. Low pressure chemical vapour deposition (LP-CVD) was employed using precursor 1, to synthesise thin films of metallic copper on ruthenium substrates under an atmosphere of hydrogen (H). Analysis of the thin films deposited at substrate temperatures of 225 °C, 250 °C and 300 °C, respectively, by SEM and AFM reveal the films to be continuous and pin hole free, and show the presence of temperature dependent growth features on the surface of the thin films. Energy dispersive X-ray spectroscopy (EDX), powder X-ray diffraction (PXRD) and X-ray photoelectron spectroscopy (XPS) all show the films to be high purity metallic copper.
Original languageEnglish
Pages (from-to)5554-5565
JournalDalton Transactions
Volume42
Issue number15
Early online date21 Feb 2013
DOIs
Publication statusPublished - 2013

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Copper
Chemical vapor deposition
Thin films
Low pressure chemical vapor deposition
Ruthenium
Substrates
X ray powder diffraction
X ray diffraction analysis
Molecular structure
Thermogravimetric analysis
Hydrogen
X ray photoelectron spectroscopy
Metals
Single crystals
Ligands
Temperature
Scanning electron microscopy

Cite this

Willcocks, A. M., Pugh, T., Hamilton, J. A., Johnson, A. L., Richards, S. P., & Kingsley, A. J. (2013). CVD of pure copper films from novel iso-ureate complexes. Dalton Transactions, 42(15), 5554-5565. https://doi.org/10.1039/c3dt00104k

CVD of pure copper films from novel iso-ureate complexes. / Willcocks, Alexander M.; Pugh, Thomas; Hamilton, Jeff A.; Johnson, Andrew L.; Richards, Stephen P.; Kingsley, Andrew J.

In: Dalton Transactions, Vol. 42, No. 15, 2013, p. 5554-5565.

Research output: Contribution to journalArticle

Willcocks, AM, Pugh, T, Hamilton, JA, Johnson, AL, Richards, SP & Kingsley, AJ 2013, 'CVD of pure copper films from novel iso-ureate complexes', Dalton Transactions, vol. 42, no. 15, pp. 5554-5565. https://doi.org/10.1039/c3dt00104k
Willcocks AM, Pugh T, Hamilton JA, Johnson AL, Richards SP, Kingsley AJ. CVD of pure copper films from novel iso-ureate complexes. Dalton Transactions. 2013;42(15):5554-5565. https://doi.org/10.1039/c3dt00104k
Willcocks, Alexander M. ; Pugh, Thomas ; Hamilton, Jeff A. ; Johnson, Andrew L. ; Richards, Stephen P. ; Kingsley, Andrew J. / CVD of pure copper films from novel iso-ureate complexes. In: Dalton Transactions. 2013 ; Vol. 42, No. 15. pp. 5554-5565.
@article{acf79ae8385f4ba19b7ca4fc666187fe,
title = "CVD of pure copper films from novel iso-ureate complexes",
abstract = "We report the synthesis and characterisation of a new family of copper(i) metal precursors based around alkoxy-N,N′-di-alkyl-ureate ligands, and their subsequent application in the production of pure copper thin films. The molecular structure of the complexes bis-copper(i)(methoxy-N,N′-di- isopropylureate) (1) and bis-copper(i)(methoxy-N,N′-di-cyclohexylureate) (5) are described, as determined by single crystal X-ray diffraction analysis. Thermogravimetric analysis of the complexes highlighted complex 1 as a possible copper CVD precursor. Low pressure chemical vapour deposition (LP-CVD) was employed using precursor 1, to synthesise thin films of metallic copper on ruthenium substrates under an atmosphere of hydrogen (H). Analysis of the thin films deposited at substrate temperatures of 225 °C, 250 °C and 300 °C, respectively, by SEM and AFM reveal the films to be continuous and pin hole free, and show the presence of temperature dependent growth features on the surface of the thin films. Energy dispersive X-ray spectroscopy (EDX), powder X-ray diffraction (PXRD) and X-ray photoelectron spectroscopy (XPS) all show the films to be high purity metallic copper.",
author = "Willcocks, {Alexander M.} and Thomas Pugh and Hamilton, {Jeff A.} and Johnson, {Andrew L.} and Richards, {Stephen P.} and Kingsley, {Andrew J.}",
year = "2013",
doi = "10.1039/c3dt00104k",
language = "English",
volume = "42",
pages = "5554--5565",
journal = "Dalton Transactions",
issn = "1477-9226",
publisher = "Royal Society of Chemistry",
number = "15",

}

TY - JOUR

T1 - CVD of pure copper films from novel iso-ureate complexes

AU - Willcocks, Alexander M.

AU - Pugh, Thomas

AU - Hamilton, Jeff A.

AU - Johnson, Andrew L.

AU - Richards, Stephen P.

AU - Kingsley, Andrew J.

PY - 2013

Y1 - 2013

N2 - We report the synthesis and characterisation of a new family of copper(i) metal precursors based around alkoxy-N,N′-di-alkyl-ureate ligands, and their subsequent application in the production of pure copper thin films. The molecular structure of the complexes bis-copper(i)(methoxy-N,N′-di- isopropylureate) (1) and bis-copper(i)(methoxy-N,N′-di-cyclohexylureate) (5) are described, as determined by single crystal X-ray diffraction analysis. Thermogravimetric analysis of the complexes highlighted complex 1 as a possible copper CVD precursor. Low pressure chemical vapour deposition (LP-CVD) was employed using precursor 1, to synthesise thin films of metallic copper on ruthenium substrates under an atmosphere of hydrogen (H). Analysis of the thin films deposited at substrate temperatures of 225 °C, 250 °C and 300 °C, respectively, by SEM and AFM reveal the films to be continuous and pin hole free, and show the presence of temperature dependent growth features on the surface of the thin films. Energy dispersive X-ray spectroscopy (EDX), powder X-ray diffraction (PXRD) and X-ray photoelectron spectroscopy (XPS) all show the films to be high purity metallic copper.

AB - We report the synthesis and characterisation of a new family of copper(i) metal precursors based around alkoxy-N,N′-di-alkyl-ureate ligands, and their subsequent application in the production of pure copper thin films. The molecular structure of the complexes bis-copper(i)(methoxy-N,N′-di- isopropylureate) (1) and bis-copper(i)(methoxy-N,N′-di-cyclohexylureate) (5) are described, as determined by single crystal X-ray diffraction analysis. Thermogravimetric analysis of the complexes highlighted complex 1 as a possible copper CVD precursor. Low pressure chemical vapour deposition (LP-CVD) was employed using precursor 1, to synthesise thin films of metallic copper on ruthenium substrates under an atmosphere of hydrogen (H). Analysis of the thin films deposited at substrate temperatures of 225 °C, 250 °C and 300 °C, respectively, by SEM and AFM reveal the films to be continuous and pin hole free, and show the presence of temperature dependent growth features on the surface of the thin films. Energy dispersive X-ray spectroscopy (EDX), powder X-ray diffraction (PXRD) and X-ray photoelectron spectroscopy (XPS) all show the films to be high purity metallic copper.

UR - http://www.scopus.com/inward/record.url?scp=84875449924&partnerID=8YFLogxK

UR - http://dx.doi.org/10.1039/c3dt00104k

U2 - 10.1039/c3dt00104k

DO - 10.1039/c3dt00104k

M3 - Article

VL - 42

SP - 5554

EP - 5565

JO - Dalton Transactions

JF - Dalton Transactions

SN - 1477-9226

IS - 15

ER -