Cryogenic Operation of Enhancement-Mode GaN HEMTs

Adel Deriszadeh; Xianwu Zeng; Zhongying Wang; Ravi Kiran Surapaneni; Gowtham Galla; Ludovic Ybanez; Xiaoze Pei

doi:10.1109/PEASA58318.2023.10235619

Cryogenic Operation of Enhancement-Mode GaN HEMTs

Adel Deriszadeh, Xianwu Zeng, Zhongying Wang, Ravi Kiran Surapaneni, Gowtham Galla, Ludovic Ybanez, Xiaoze Pei

Research output: Chapter or section in a book/report/conference proceeding › Chapter in a published conference proceeding

Abstract

This paper experimentally investigates the performance of enhancement-mode Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) at Liquid Nitrogen temperature. The tests are performed on a commercially available GaN transistor to determine the impact of cryogenic temperatures on the transistor performance.

Original language	English
Title of host publication	2023 IEEE Workshop on Power Electronics for Aerospace Applications, PEASA 2023
Place of Publication	U. S. A.
Publisher	IEEE
ISBN (Electronic)	9798350324099
DOIs	https://doi.org/10.1109/PEASA58318.2023.10235619
Publication status	Published - 4 Sept 2023
Event	2023 IEEE Workshop on Power Electronics for Aerospace Applications, PEASA 2023 - Nottingham, UK United Kingdom Duration: 18 Jul 2023 → 19 Jul 2023

Publication series

Name	2023 IEEE Workshop on Power Electronics for Aerospace Applications, PEASA 2023

Conference

Conference	2023 IEEE Workshop on Power Electronics for Aerospace Applications, PEASA 2023
Country/Territory	UK United Kingdom
City	Nottingham
Period	18/07/23 → 19/07/23

Bibliographical note

Funding Information:
This work was supported in part by the UK Aerospace Technology Institute under contract 103136 - Zero Emissions for Sustainable Transport 1 (ZEST 1).

Funding

ACKNOWLEDGMENT This work was supported in part by the UK Aerospace Technology Institute under contract 103136 -Zero Emissions for Sustainable Transport 1 (ZEST 1).

Keywords

Cryogenic temperature
Double-Pulse test
GaN HEMT
switching characterization
Turn-off transition
Turn-on transition

ASJC Scopus subject areas

Energy Engineering and Power Technology
Aerospace Engineering
Electrical and Electronic Engineering
Instrumentation

Access to Document

10.1109/PEASA58318.2023.10235619

Cite this

Cryogenic Operation of Enhancement-Mode GaN HEMTs. / Deriszadeh, Adel; Zeng, Xianwu; Wang, Zhongying et al.
2023 IEEE Workshop on Power Electronics for Aerospace Applications, PEASA 2023. U. S. A.: IEEE, 2023. (2023 IEEE Workshop on Power Electronics for Aerospace Applications, PEASA 2023).

Research output: Chapter or section in a book/report/conference proceeding › Chapter in a published conference proceeding

Deriszadeh, A, Zeng, X, Wang, Z, Surapaneni, RK, Galla, G, Ybanez, L & Pei, X 2023, Cryogenic Operation of Enhancement-Mode GaN HEMTs. in 2023 IEEE Workshop on Power Electronics for Aerospace Applications, PEASA 2023. 2023 IEEE Workshop on Power Electronics for Aerospace Applications, PEASA 2023, IEEE, U. S. A., 2023 IEEE Workshop on Power Electronics for Aerospace Applications, PEASA 2023, Nottingham, UK United Kingdom, 18/07/23. https://doi.org/10.1109/PEASA58318.2023.10235619

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abstract = "This paper experimentally investigates the performance of enhancement-mode Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) at Liquid Nitrogen temperature. The tests are performed on a commercially available GaN transistor to determine the impact of cryogenic temperatures on the transistor performance.",

keywords = "Cryogenic temperature, Double-Pulse test, GaN HEMT, switching characterization, Turn-off transition, Turn-on transition",

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note = "Funding Information: This work was supported in part by the UK Aerospace Technology Institute under contract 103136 - Zero Emissions for Sustainable Transport 1 (ZEST 1). ; 2023 IEEE Workshop on Power Electronics for Aerospace Applications, PEASA 2023 ; Conference date: 18-07-2023 Through 19-07-2023",

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AU - Ybanez, Ludovic

AU - Pei, Xiaoze

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Y1 - 2023/9/4

N2 - This paper experimentally investigates the performance of enhancement-mode Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) at Liquid Nitrogen temperature. The tests are performed on a commercially available GaN transistor to determine the impact of cryogenic temperatures on the transistor performance.

AB - This paper experimentally investigates the performance of enhancement-mode Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) at Liquid Nitrogen temperature. The tests are performed on a commercially available GaN transistor to determine the impact of cryogenic temperatures on the transistor performance.

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Cryogenic Operation of Enhancement-Mode GaN HEMTs

Abstract

Publication series

Conference

Bibliographical note

Funding

Keywords

ASJC Scopus subject areas

Access to Document

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