Crossbar memory array of organic bistable rectifying diodes for nonvolatile data storage

Kamal Asadi, Mengyuan Li, Natalie Stingelin, Paul W.M. Blom, Dago M. De Leeuw

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

Cross-talk in memories using resistive switches in a cross-bar geometry can be prevented by integration of a rectifying diode. We present a functional cross bar memory array using a phase separated blend of a ferroelectric and a semiconducting polymer as storage medium. Each intersection acts simultaneously as a bistable rectifying diode. A logic table of a 4-bit memory and integration into a 3×3 cross bar array are demonstrated. The most difficult state, a high resistance bit completely surrounded by low resistance bits could be unambiguously identified.

Original languageEnglish
Article number193308
JournalApplied Physics Letters
Volume97
Issue number19
DOIs
Publication statusPublished - 8 Nov 2010

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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