Crossbar memory array of organic bistable rectifying diodes for nonvolatile data storage

Kamal Asadi; Mengyuan Li; Natalie Stingelin; Paul W.M. Blom; Dago M. De Leeuw

doi:10.1063/1.3508948

Crossbar memory array of organic bistable rectifying diodes for nonvolatile data storage

Kamal Asadi, Mengyuan Li, Natalie Stingelin, Paul W.M. Blom, Dago M. De Leeuw

Department of Physics

Research output: Contribution to journal › Article › peer-review

60 Citations (SciVal)

Abstract

Cross-talk in memories using resistive switches in a cross-bar geometry can be prevented by integration of a rectifying diode. We present a functional cross bar memory array using a phase separated blend of a ferroelectric and a semiconducting polymer as storage medium. Each intersection acts simultaneously as a bistable rectifying diode. A logic table of a 4-bit memory and integration into a 3×3 cross bar array are demonstrated. The most difficult state, a high resistance bit completely surrounded by low resistance bits could be unambiguously identified.

Original language	English
Article number	193308
Journal	Applied Physics Letters
Volume	97
Issue number	19
DOIs	https://doi.org/10.1063/1.3508948
Publication status	Published - 8 Nov 2010

Funding

The authors gratefully acknowledge technical assistance from J. Harkema at the University of Groningen, and MiPlaza, Eindhoven. The research leading to these results has received funding from the Zernike Institute for Advanced Materials, University of Groningen, The Netherlands, and the European Community’s Seventh Framework Program (FP7/2007-2013) under grant Agreement No. 248092 of the MOMA Project.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3508948

Cite this

@article{534ce4a476724d0f9f34ef1b19b6b3f6,

title = "Crossbar memory array of organic bistable rectifying diodes for nonvolatile data storage",

abstract = "Cross-talk in memories using resistive switches in a cross-bar geometry can be prevented by integration of a rectifying diode. We present a functional cross bar memory array using a phase separated blend of a ferroelectric and a semiconducting polymer as storage medium. Each intersection acts simultaneously as a bistable rectifying diode. A logic table of a 4-bit memory and integration into a 3×3 cross bar array are demonstrated. The most difficult state, a high resistance bit completely surrounded by low resistance bits could be unambiguously identified.",

author = "Kamal Asadi and Mengyuan Li and Natalie Stingelin and Blom, {Paul W.M.} and {De Leeuw}, {Dago M.}",

year = "2010",

month = nov,

day = "8",

doi = "10.1063/1.3508948",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "19",

}

TY - JOUR

T1 - Crossbar memory array of organic bistable rectifying diodes for nonvolatile data storage

AU - Asadi, Kamal

AU - Li, Mengyuan

AU - Stingelin, Natalie

AU - Blom, Paul W.M.

AU - De Leeuw, Dago M.

PY - 2010/11/8

Y1 - 2010/11/8

N2 - Cross-talk in memories using resistive switches in a cross-bar geometry can be prevented by integration of a rectifying diode. We present a functional cross bar memory array using a phase separated blend of a ferroelectric and a semiconducting polymer as storage medium. Each intersection acts simultaneously as a bistable rectifying diode. A logic table of a 4-bit memory and integration into a 3×3 cross bar array are demonstrated. The most difficult state, a high resistance bit completely surrounded by low resistance bits could be unambiguously identified.

AB - Cross-talk in memories using resistive switches in a cross-bar geometry can be prevented by integration of a rectifying diode. We present a functional cross bar memory array using a phase separated blend of a ferroelectric and a semiconducting polymer as storage medium. Each intersection acts simultaneously as a bistable rectifying diode. A logic table of a 4-bit memory and integration into a 3×3 cross bar array are demonstrated. The most difficult state, a high resistance bit completely surrounded by low resistance bits could be unambiguously identified.

UR - http://www.scopus.com/inward/record.url?scp=78249283559&partnerID=8YFLogxK

U2 - 10.1063/1.3508948

DO - 10.1063/1.3508948

M3 - Article

AN - SCOPUS:78249283559

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

M1 - 193308

ER -

Crossbar memory array of organic bistable rectifying diodes for nonvolatile data storage

Abstract

Funding

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this