Abstract
Cross-talk in memories using resistive switches in a cross-bar geometry can be prevented by integration of a rectifying diode. We present a functional cross bar memory array using a phase separated blend of a ferroelectric and a semiconducting polymer as storage medium. Each intersection acts simultaneously as a bistable rectifying diode. A logic table of a 4-bit memory and integration into a 3×3 cross bar array are demonstrated. The most difficult state, a high resistance bit completely surrounded by low resistance bits could be unambiguously identified.
Original language | English |
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Article number | 193308 |
Journal | Applied Physics Letters |
Volume | 97 |
Issue number | 19 |
DOIs | |
Publication status | Published - 8 Nov 2010 |
Funding
The authors gratefully acknowledge technical assistance from J. Harkema at the University of Groningen, and MiPlaza, Eindhoven. The research leading to these results has received funding from the Zernike Institute for Advanced Materials, University of Groningen, The Netherlands, and the European Community’s Seventh Framework Program (FP7/2007-2013) under grant Agreement No. 248092 of the MOMA Project.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)