Crossbar memory array of organic bistable rectifying diodes for nonvolatile data storage

Kamal Asadi; Mengyuan Li; Natalie Stingelin; Paul W.M. Blom; Dago M. De Leeuw

doi:10.1063/1.3508948

Crossbar memory array of organic bistable rectifying diodes for nonvolatile data storage

Kamal Asadi, Mengyuan Li, Natalie Stingelin, Paul W.M. Blom, Dago M. De Leeuw

Department of Physics

Research output: Contribution to journal › Article

46 Citations (Scopus)

Abstract

Cross-talk in memories using resistive switches in a cross-bar geometry can be prevented by integration of a rectifying diode. We present a functional cross bar memory array using a phase separated blend of a ferroelectric and a semiconducting polymer as storage medium. Each intersection acts simultaneously as a bistable rectifying diode. A logic table of a 4-bit memory and integration into a 3×3 cross bar array are demonstrated. The most difficult state, a high resistance bit completely surrounded by low resistance bits could be unambiguously identified.

Original language	English
Article number	193308
Journal	Applied Physics Letters
Volume	97
Issue number	19
DOIs	https://doi.org/10.1063/1.3508948
Publication status	Published - 8 Nov 2010

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3508948

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