Abstract
Two terminal devices that exhibit resistance switching in response to an external voltage are interesting for neuromorphic computing applications. Owing to its simple device structure, a crossbar array of two-terminal resistance switching devices is highly desired for application as artificial neural network weights. Here, ferroelectric diodes that show resistance switching in their forward bias are presented. The resistance can be set to a high- and a low-resistance state or any state between these limits. It is demonstrated that the ferroelectric diodes can function as an artificial synapse. An array of the ferroelectric diodes with two bit and two row lines (2 × 2) is demonstrated. The resistance of every bit is independently tuned, and spike-time-dependent plasticity is shown for the array.
| Original language | English |
|---|---|
| Article number | 2100558 |
| Journal | Advanced Electronic Materials |
| Volume | 7 |
| Issue number | 12 |
| Early online date | 15 Oct 2021 |
| DOIs | |
| Publication status | Published - 31 Dec 2021 |
Bibliographical note
Funding Information:L.S. and M.H.A. contributed equally to this work. The authors would like to thank Prof. Paul W. M. Blom and Dr. M. Kumar for fruitful discussions, C. Bauer and F. Keller for technical assistance, and M. Beuchel for the synthesis of PFO. This work received financial support from the Alexander von Humboldt Foundation and Max Planck Institute for Polymer Research.
Funding
L.S. and M.H.A. contributed equally to this work. The authors would like to thank Prof. Paul W. M. Blom and Dr. M. Kumar for fruitful discussions, C. Bauer and F. Keller for technical assistance, and M. Beuchel for the synthesis of PFO. This work received financial support from the Alexander von Humboldt Foundation and Max Planck Institute for Polymer Research.
Keywords
- array
- ferroelectric diode
- memristor
- plasticity
- synapse
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials