Crossbar Array of Artificial Synapses Based on Ferroelectric Diodes

Laura Seufert, Morteza HassanpourAmiri, Paschalis Gkoupidenis, Kamal Asadi

Research output: Contribution to journalArticlepeer-review

12 Citations (SciVal)


Two terminal devices that exhibit resistance switching in response to an external voltage are interesting for neuromorphic computing applications. Owing to its simple device structure, a crossbar array of two-terminal resistance switching devices is highly desired for application as artificial neural network weights. Here, ferroelectric diodes that show resistance switching in their forward bias are presented. The resistance can be set to a high- and a low-resistance state or any state between these limits. It is demonstrated that the ferroelectric diodes can function as an artificial synapse. An array of the ferroelectric diodes with two bit and two row lines (2 × 2) is demonstrated. The resistance of every bit is independently tuned, and spike-time-dependent plasticity is shown for the array.

Original languageEnglish
Article number2100558
JournalAdvanced Electronic Materials
Issue number12
Early online date15 Oct 2021
Publication statusPublished - 31 Dec 2021

Bibliographical note

Funding Information:
L.S. and M.H.A. contributed equally to this work. The authors would like to thank Prof. Paul W. M. Blom and Dr. M. Kumar for fruitful discussions, C. Bauer and F. Keller for technical assistance, and M. Beuchel for the synthesis of PFO. This work received financial support from the Alexander von Humboldt Foundation and Max Planck Institute for Polymer Research.


  • array
  • ferroelectric diode
  • memristor
  • plasticity
  • synapse

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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