TY - JOUR
T1 - Crossbar Array of Artificial Synapses Based on Ferroelectric Diodes
AU - Seufert, Laura
AU - HassanpourAmiri, Morteza
AU - Gkoupidenis, Paschalis
AU - Asadi, Kamal
N1 - Funding Information:
L.S. and M.H.A. contributed equally to this work. The authors would like to thank Prof. Paul W. M. Blom and Dr. M. Kumar for fruitful discussions, C. Bauer and F. Keller for technical assistance, and M. Beuchel for the synthesis of PFO. This work received financial support from the Alexander von Humboldt Foundation and Max Planck Institute for Polymer Research.
PY - 2021/12/31
Y1 - 2021/12/31
N2 - Two terminal devices that exhibit resistance switching in response to an external voltage are interesting for neuromorphic computing applications. Owing to its simple device structure, a crossbar array of two-terminal resistance switching devices is highly desired for application as artificial neural network weights. Here, ferroelectric diodes that show resistance switching in their forward bias are presented. The resistance can be set to a high- and a low-resistance state or any state between these limits. It is demonstrated that the ferroelectric diodes can function as an artificial synapse. An array of the ferroelectric diodes with two bit and two row lines (2 × 2) is demonstrated. The resistance of every bit is independently tuned, and spike-time-dependent plasticity is shown for the array.
AB - Two terminal devices that exhibit resistance switching in response to an external voltage are interesting for neuromorphic computing applications. Owing to its simple device structure, a crossbar array of two-terminal resistance switching devices is highly desired for application as artificial neural network weights. Here, ferroelectric diodes that show resistance switching in their forward bias are presented. The resistance can be set to a high- and a low-resistance state or any state between these limits. It is demonstrated that the ferroelectric diodes can function as an artificial synapse. An array of the ferroelectric diodes with two bit and two row lines (2 × 2) is demonstrated. The resistance of every bit is independently tuned, and spike-time-dependent plasticity is shown for the array.
KW - array
KW - ferroelectric diode
KW - memristor
KW - plasticity
KW - synapse
UR - http://www.scopus.com/inward/record.url?scp=85117022789&partnerID=8YFLogxK
U2 - 10.1002/aelm.202100558
DO - 10.1002/aelm.202100558
M3 - Article
AN - SCOPUS:85117022789
SN - 2199-160X
VL - 7
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
IS - 12
M1 - 2100558
ER -