Coupling between in-plane and longitudinal motion in resonant tunnelling structures

A. Nogaret, L. A. Cury, D. K. Maude, J. C. Portal, D. L. Sivco, A. Y. Cho, G. Hill

Research output: Contribution to journalArticlepeer-review


We investigate tunnelling transport in an asymmetric double-barrier structure with heavily doped contacts by use of a quantizing magnetic field applied perpendicular to the layers. We find that for bias voltages in the region of the resonance, the current-voltage (I-V) characteristics exhibit step-like features that shift to higher biases with increasing magnetic field. Our experimental results clearly show two distinct regions in the I-V curves where tunnelling is controlled by Landau 'ladder' formation in either the well or the barriers. It is shown that electrons with relatively large in-plane energy tunnel conserving their in-plane energy rather than their in-plane momentum.
Original languageEnglish
Pages (from-to)1810-1814
JournalSemiconductor Science and Technology
Issue number10
Publication statusPublished - 1993


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