Corrigendum to “High quality hydrogen silsesquioxane encapsulated graphene devices with edge contacts” [Mater. Lett. 257 (2019) 126765](S0167577X19313965)(10.1016/j.matlet.2019.126765)

Penglei Li, David Collomb, Simon Bending

Research output: Contribution to journalComment/debatepeer-review

Abstract

The authors regret a data statement should have been included in the original paper, which reads ‘All data discussed in this manuscript can be accessed at https://doi.org/10.15125/BATH-00718’. The authors would like to apologise for any inconvenience caused.

Original languageEnglish
Article number126976
JournalMaterials Letters
Volume260
DOIs
Publication statusPublished - 1 Feb 2020

Bibliographical note

Publisher Copyright:
© 2019

Copyright:
Copyright 2019 Elsevier B.V., All rights reserved.

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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