Corrigendum to “High quality hydrogen silsesquioxane encapsulated graphene devices with edge contacts” [Mater. Lett. 257 (2019) 126765](S0167577X19313965)(10.1016/j.matlet.2019.126765)

Penglei Li; David Collomb; Simon Bending

doi:10.1016/j.matlet.2019.126976

Corrigendum to “High quality hydrogen silsesquioxane encapsulated graphene devices with edge contacts” [Mater. Lett. 257 (2019) 126765](S0167577X19313965)(10.1016/j.matlet.2019.126765)

Penglei Li, David Collomb, Simon Bending

Research output: Contribution to journal › Comment/debate › peer-review

Abstract

The authors regret a data statement should have been included in the original paper, which reads ‘All data discussed in this manuscript can be accessed at https://doi.org/10.15125/BATH-00718’. The authors would like to apologise for any inconvenience caused.

Original language	English
Article number	126976
Journal	Materials Letters
Volume	260
DOIs	https://doi.org/10.1016/j.matlet.2019.126976
Publication status	Published - 1 Feb 2020

Bibliographical note

Publisher Copyright:
© 2019

Copyright:
Copyright 2019 Elsevier B.V., All rights reserved.

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.matlet.2019.126976

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title = "Corrigendum to “High quality hydrogen silsesquioxane encapsulated graphene devices with edge contacts” [Mater. Lett. 257 (2019) 126765](S0167577X19313965)(10.1016/j.matlet.2019.126765)",

abstract = "The authors regret a data statement should have been included in the original paper, which reads {\textquoteleft}All data discussed in this manuscript can be accessed at https://doi.org/10.15125/BATH-00718{\textquoteright}. The authors would like to apologise for any inconvenience caused.",

author = "Penglei Li and David Collomb and Simon Bending",

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AU - Li, Penglei

AU - Collomb, David

AU - Bending, Simon

PY - 2020/2/1

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N2 - The authors regret a data statement should have been included in the original paper, which reads ‘All data discussed in this manuscript can be accessed at https://doi.org/10.15125/BATH-00718’. The authors would like to apologise for any inconvenience caused.

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SN - 0167-577X

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Corrigendum to “High quality hydrogen silsesquioxane encapsulated graphene devices with edge contacts” [Mater. Lett. 257 (2019) 126765](S0167577X19313965)(10.1016/j.matlet.2019.126765)

Abstract

Bibliographical note

ASJC Scopus subject areas

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Graphene Nanosensors for Scanning Hall Microscopy and Susceptometry

Dataset for "High quality hydrogen silsesquioxane encapsulated graphene devices with edge contacts"

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Corrigendum to “High quality hydrogen silsesquioxane encapsulated graphene devices with edge contacts” [Mater. Lett. 257 (2019) 126765](S0167577X19313965)(10.1016/j.matlet.2019.126765)

Abstract

Bibliographical note

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

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Graphene Nanosensors for Scanning Hall Microscopy and Susceptometry

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Dataset for "High quality hydrogen silsesquioxane encapsulated graphene devices with edge contacts"

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