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Abstract
We examine the charge density wave (CDW) properties of 1T-VSe2 crystals grown by chemical vapor transport (CVT) under varying conditions. Specifically, we find that upon lowering the growth temperature (Tg<630°C), there is a significant increase in both the CDW transition temperature and the residual resistance ratio (RRR) obtained from electrical transport measurements. Using x-ray photoelectron spectroscopy, we correlate the observed CDW properties with stoichiometry and the nature of defects. In addition, we have optimized a method to grow ultrahigh-purity 1T-VSe2 crystals with a CDW transition temperature TCDW=(112.7±0.8) K and maximum residual resistance ratio RRR≈49, which is the highest reported thus far. This work highlights the sensitivity of the CDW in 1T-VSe2 to defects and overall stoichiometry and the importance of controlling the crystal growth conditions of strongly correlated transition metal dichalcogenides.
Original language | English |
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Article number | 025002 |
Journal | Physical Review Materials |
Volume | 4 |
Issue number | 2 |
Early online date | 11 Feb 2020 |
DOIs | |
Publication status | Published - 29 Feb 2020 |
Keywords
- Charge density waves
- Transition metal dichalcogenides
- Crystal growth
- Defects
- Photoelectron Spectroscopy
- X-ray crystallography
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Dive into the research topics of 'Correlation between crystal purity and the charge density wave in 1T-VSe2'. Together they form a unique fingerprint.Projects
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EPSRC Centre for Doctoral Training in Condensed Matter Physics
1/04/14 → 31/10/22
Project: Research council