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We examine the charge density wave (CDW) properties of 1T-VSe2 crystals grown by chemical vapor transport (CVT) under varying conditions. Specifically, we find that upon lowering the growth temperature (Tg<630°C), there is a significant increase in both the CDW transition temperature and the residual resistance ratio (RRR) obtained from electrical transport measurements. Using x-ray photoelectron spectroscopy, we correlate the observed CDW properties with stoichiometry and the nature of defects. In addition, we have optimized a method to grow ultrahigh-purity 1T-VSe2 crystals with a CDW transition temperature TCDW=(112.7±0.8) K and maximum residual resistance ratio RRR≈49, which is the highest reported thus far. This work highlights the sensitivity of the CDW in 1T-VSe2 to defects and overall stoichiometry and the importance of controlling the crystal growth conditions of strongly correlated transition metal dichalcogenides.

Original languageEnglish
Article number025002
JournalPhysical Review Materials
Issue number2
Early online date11 Feb 2020
Publication statusPublished - 29 Feb 2020


  • Charge density waves
  • Transition metal dichalcogenides
  • Crystal growth
  • Defects
  • Photoelectron Spectroscopy
  • X-ray crystallography


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