Correlation between crystal purity and the charge density wave in 1T-VSe2

Charles Sayers; Liam Farrar; Simon Bending; Mattia Cattelan; Alfred Jones; Neil Fox; Gabriele Kociok-Kohn; Konstantin Koshmak; Jude Laverock; Luca Pasquali; Enrico Da Como

doi:10.1103/PhysRevMaterials.4.025002

Correlation between crystal purity and the charge density wave in 1T-VSe2

Charles Sayers, Liam Farrar, Simon Bending, Mattia Cattelan, Alfred Jones, Neil Fox, Gabriele Kociok-Kohn, Konstantin Koshmak, Jude Laverock, Luca Pasquali, Enrico Da Como

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Abstract

We examine the charge density wave (CDW) properties of 1T-VSe2 crystals grown by chemical vapor transport (CVT) under varying conditions. Specifically, we find that upon lowering the growth temperature (Tg<630°C), there is a significant increase in both the CDW transition temperature and the residual resistance ratio (RRR) obtained from electrical transport measurements. Using x-ray photoelectron spectroscopy, we correlate the observed CDW properties with stoichiometry and the nature of defects. In addition, we have optimized a method to grow ultrahigh-purity 1T-VSe2 crystals with a CDW transition temperature TCDW=(112.7±0.8) K and maximum residual resistance ratio RRR≈49, which is the highest reported thus far. This work highlights the sensitivity of the CDW in 1T-VSe2 to defects and overall stoichiometry and the importance of controlling the crystal growth conditions of strongly correlated transition metal dichalcogenides.

Original language	English
Article number	025002
Journal	Physical Review Materials
Volume	4
Issue number	2
Early online date	11 Feb 2020
DOIs	https://doi.org/10.1103/PhysRevMaterials.4.025002
Publication status	Published - 29 Feb 2020

Keywords

Charge density waves
Transition metal dichalcogenides
Crystal growth
Defects
Photoelectron Spectroscopy
X-ray crystallography

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10.1103/PhysRevMaterials.4.025002

vse2_growth.PDF
(C) 2020 American Physical Society
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title = "Correlation between crystal purity and the charge density wave in 1T-VSe2",

abstract = "We examine the charge density wave (CDW) properties of 1T-VSe2 crystals grown by chemical vapor transport (CVT) under varying conditions. Specifically, we find that upon lowering the growth temperature (Tg<630°C), there is a significant increase in both the CDW transition temperature and the residual resistance ratio (RRR) obtained from electrical transport measurements. Using x-ray photoelectron spectroscopy, we correlate the observed CDW properties with stoichiometry and the nature of defects. In addition, we have optimized a method to grow ultrahigh-purity 1T-VSe2 crystals with a CDW transition temperature TCDW=(112.7±0.8) K and maximum residual resistance ratio RRR≈49, which is the highest reported thus far. This work highlights the sensitivity of the CDW in 1T-VSe2 to defects and overall stoichiometry and the importance of controlling the crystal growth conditions of strongly correlated transition metal dichalcogenides.",

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doi = "10.1103/PhysRevMaterials.4.025002",

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AU - Sayers, Charles

AU - Farrar, Liam

AU - Bending, Simon

AU - Cattelan, Mattia

AU - Jones, Alfred

AU - Fox, Neil

AU - Kociok-Kohn, Gabriele

AU - Koshmak, Konstantin

AU - Laverock, Jude

AU - Pasquali, Luca

AU - Da Como, Enrico

PY - 2020/2/29

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N2 - We examine the charge density wave (CDW) properties of 1T-VSe2 crystals grown by chemical vapor transport (CVT) under varying conditions. Specifically, we find that upon lowering the growth temperature (Tg<630°C), there is a significant increase in both the CDW transition temperature and the residual resistance ratio (RRR) obtained from electrical transport measurements. Using x-ray photoelectron spectroscopy, we correlate the observed CDW properties with stoichiometry and the nature of defects. In addition, we have optimized a method to grow ultrahigh-purity 1T-VSe2 crystals with a CDW transition temperature TCDW=(112.7±0.8) K and maximum residual resistance ratio RRR≈49, which is the highest reported thus far. This work highlights the sensitivity of the CDW in 1T-VSe2 to defects and overall stoichiometry and the importance of controlling the crystal growth conditions of strongly correlated transition metal dichalcogenides.

AB - We examine the charge density wave (CDW) properties of 1T-VSe2 crystals grown by chemical vapor transport (CVT) under varying conditions. Specifically, we find that upon lowering the growth temperature (Tg<630°C), there is a significant increase in both the CDW transition temperature and the residual resistance ratio (RRR) obtained from electrical transport measurements. Using x-ray photoelectron spectroscopy, we correlate the observed CDW properties with stoichiometry and the nature of defects. In addition, we have optimized a method to grow ultrahigh-purity 1T-VSe2 crystals with a CDW transition temperature TCDW=(112.7±0.8) K and maximum residual resistance ratio RRR≈49, which is the highest reported thus far. This work highlights the sensitivity of the CDW in 1T-VSe2 to defects and overall stoichiometry and the importance of controlling the crystal growth conditions of strongly correlated transition metal dichalcogenides.

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KW - Defects

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Correlation between crystal purity and the charge density wave in 1T-VSe2

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Correlation between crystal purity and the charge density wave in 1T-VSe2

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