TY - JOUR
T1 - Correlation between crystal purity and the charge density wave in 1T-VSe2
AU - Sayers, Charles
AU - Farrar, Liam
AU - Bending, Simon
AU - Cattelan, Mattia
AU - Jones, Alfred
AU - Fox, Neil
AU - Kociok-Kohn, Gabriele
AU - Koshmak, Konstantin
AU - Laverock, Jude
AU - Pasquali, Luca
AU - Da Como, Enrico
PY - 2020/2/29
Y1 - 2020/2/29
N2 - We examine the charge density wave (CDW) properties of 1T-VSe2 crystals grown by chemical vapor transport (CVT) under varying conditions. Specifically, we find that upon lowering the growth temperature (Tg<630°C), there is a significant increase in both the CDW transition temperature and the residual resistance ratio (RRR) obtained from electrical transport measurements. Using x-ray photoelectron spectroscopy, we correlate the observed CDW properties with stoichiometry and the nature of defects. In addition, we have optimized a method to grow ultrahigh-purity 1T-VSe2 crystals with a CDW transition temperature TCDW=(112.7±0.8) K and maximum residual resistance ratio RRR≈49, which is the highest reported thus far. This work highlights the sensitivity of the CDW in 1T-VSe2 to defects and overall stoichiometry and the importance of controlling the crystal growth conditions of strongly correlated transition metal dichalcogenides.
AB - We examine the charge density wave (CDW) properties of 1T-VSe2 crystals grown by chemical vapor transport (CVT) under varying conditions. Specifically, we find that upon lowering the growth temperature (Tg<630°C), there is a significant increase in both the CDW transition temperature and the residual resistance ratio (RRR) obtained from electrical transport measurements. Using x-ray photoelectron spectroscopy, we correlate the observed CDW properties with stoichiometry and the nature of defects. In addition, we have optimized a method to grow ultrahigh-purity 1T-VSe2 crystals with a CDW transition temperature TCDW=(112.7±0.8) K and maximum residual resistance ratio RRR≈49, which is the highest reported thus far. This work highlights the sensitivity of the CDW in 1T-VSe2 to defects and overall stoichiometry and the importance of controlling the crystal growth conditions of strongly correlated transition metal dichalcogenides.
KW - Charge density waves
KW - Transition metal dichalcogenides
KW - Crystal growth
KW - Defects
KW - Photoelectron Spectroscopy
KW - X-ray crystallography
UR - http://www.scopus.com/inward/record.url?scp=85082831220&partnerID=8YFLogxK
U2 - 10.1103/PhysRevMaterials.4.025002
DO - 10.1103/PhysRevMaterials.4.025002
M3 - Article
VL - 4
JO - Physical Review Materials
JF - Physical Review Materials
SN - 2475-9953
IS - 2
M1 - 025002
ER -