Copper-cobalt heterobimetallic ceramic oxide thin film deposition: Synthesis, characterization and application of precursor

M Hamid; A A Tahir; M Mazhar; K C Molloy; Gabriele Kociok-Kohn

doi:10.1016/j.inoche.2008.06.018

Copper-cobalt heterobimetallic ceramic oxide thin film deposition: Synthesis, characterization and application of precursor

M Hamid, A A Tahir, M Mazhar, K C Molloy, Gabriele Kociok-Kohn

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

22 Citations (SciVal)

Abstract

Thin films of halide free Cu-Co mixed metal oxide have been prepared at 390 degrees C from the heterobimetallic complex Co-4(THF)(4)(TFA)(8)(mu-OH)(2)Cu-2(dmae)(2).0.5C(7)H(8) (1) [dmae=N,N-dimethylaminoethanol ((CH3)(2),NCH2CH2O-), TFA = triflouroacetate (CF3COO-), THIF = tetra hyd rofurane (C4H8O)] which was prepared by the reaction of [Cu(dmae)Cl](4) and Co(TFA)(2).4H(2)O. The precursor was characterized for its melting point, elemental composition, FTIR and X-ray single crystal structure determination. Thin films grown on glass substrate by using AACVID out of complex I were characterized by XRD and SEM. TGA and AACVD experiments reveal it to be a suitable precursor for the deposition of halide free Cu-Co mixedmetal oxide thin films at relatively low temperatures. (C) 2008 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	1159-1161
Number of pages	3
Journal	Inorganic Chemistry Communications
Volume	11
Issue number	10
DOIs	https://doi.org/10.1016/j.inoche.2008.06.018
Publication status	Published - 2008

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ID number: 000260549900015

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10.1016/j.inoche.2008.06.018

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title = "Copper-cobalt heterobimetallic ceramic oxide thin film deposition: Synthesis, characterization and application of precursor",

abstract = "Thin films of halide free Cu-Co mixed metal oxide have been prepared at 390 degrees C from the heterobimetallic complex Co-4(THF)(4)(TFA)(8)(mu-OH)(2)Cu-2(dmae)(2).0.5C(7)H(8) (1) [dmae=N,N-dimethylaminoethanol ((CH3)(2),NCH2CH2O-), TFA = triflouroacetate (CF3COO-), THIF = tetra hyd rofurane (C4H8O)] which was prepared by the reaction of [Cu(dmae)Cl](4) and Co(TFA)(2).4H(2)O. The precursor was characterized for its melting point, elemental composition, FTIR and X-ray single crystal structure determination. Thin films grown on glass substrate by using AACVID out of complex I were characterized by XRD and SEM. TGA and AACVD experiments reveal it to be a suitable precursor for the deposition of halide free Cu-Co mixedmetal oxide thin films at relatively low temperatures. (C) 2008 Elsevier B.V. All rights reserved.",

author = "M Hamid and Tahir, \{A A\} and M Mazhar and Molloy, \{K C\} and Gabriele Kociok-Kohn",

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doi = "10.1016/j.inoche.2008.06.018",

language = "English",

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pages = "1159--1161",

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T1 - Copper-cobalt heterobimetallic ceramic oxide thin film deposition: Synthesis, characterization and application of precursor

AU - Hamid, M

AU - Tahir, A A

AU - Mazhar, M

AU - Molloy, K C

AU - Kociok-Kohn, Gabriele

N1 - ID number: 000260549900015

PY - 2008

Y1 - 2008

N2 - Thin films of halide free Cu-Co mixed metal oxide have been prepared at 390 degrees C from the heterobimetallic complex Co-4(THF)(4)(TFA)(8)(mu-OH)(2)Cu-2(dmae)(2).0.5C(7)H(8) (1) [dmae=N,N-dimethylaminoethanol ((CH3)(2),NCH2CH2O-), TFA = triflouroacetate (CF3COO-), THIF = tetra hyd rofurane (C4H8O)] which was prepared by the reaction of [Cu(dmae)Cl](4) and Co(TFA)(2).4H(2)O. The precursor was characterized for its melting point, elemental composition, FTIR and X-ray single crystal structure determination. Thin films grown on glass substrate by using AACVID out of complex I were characterized by XRD and SEM. TGA and AACVD experiments reveal it to be a suitable precursor for the deposition of halide free Cu-Co mixedmetal oxide thin films at relatively low temperatures. (C) 2008 Elsevier B.V. All rights reserved.

AB - Thin films of halide free Cu-Co mixed metal oxide have been prepared at 390 degrees C from the heterobimetallic complex Co-4(THF)(4)(TFA)(8)(mu-OH)(2)Cu-2(dmae)(2).0.5C(7)H(8) (1) [dmae=N,N-dimethylaminoethanol ((CH3)(2),NCH2CH2O-), TFA = triflouroacetate (CF3COO-), THIF = tetra hyd rofurane (C4H8O)] which was prepared by the reaction of [Cu(dmae)Cl](4) and Co(TFA)(2).4H(2)O. The precursor was characterized for its melting point, elemental composition, FTIR and X-ray single crystal structure determination. Thin films grown on glass substrate by using AACVID out of complex I were characterized by XRD and SEM. TGA and AACVD experiments reveal it to be a suitable precursor for the deposition of halide free Cu-Co mixedmetal oxide thin films at relatively low temperatures. (C) 2008 Elsevier B.V. All rights reserved.

UR - https://www.scopus.com/pages/publications/52949109169

UR - http://dx.doi.org/10.1016/j.inoche.2008.06.018

U2 - 10.1016/j.inoche.2008.06.018

DO - 10.1016/j.inoche.2008.06.018

M3 - Article

SN - 1387-7003

VL - 11

SP - 1159

EP - 1161

JO - Inorganic Chemistry Communications

JF - Inorganic Chemistry Communications

IS - 10

ER -

Copper-cobalt heterobimetallic ceramic oxide thin film deposition: Synthesis, characterization and application of precursor

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