Thin films of halide free Cu-Co mixed metal oxide have been prepared at 390 degrees C from the heterobimetallic complex Co-4(THF)(4)(TFA)(8)(mu-OH)(2)Cu-2(dmae)(2).0.5C(7)H(8) (1) [dmae=N,N-dimethylaminoethanol ((CH3)(2),NCH2CH2O-), TFA = triflouroacetate (CF3COO-), THIF = tetra hyd rofurane (C4H8O)] which was prepared by the reaction of [Cu(dmae)Cl](4) and Co(TFA)(2).4H(2)O. The precursor was characterized for its melting point, elemental composition, FTIR and X-ray single crystal structure determination. Thin films grown on glass substrate by using AACVID out of complex I were characterized by XRD and SEM. TGA and AACVD experiments reveal it to be a suitable precursor for the deposition of halide free Cu-Co mixedmetal oxide thin films at relatively low temperatures. (C) 2008 Elsevier B.V. All rights reserved.
Hamid, M., Tahir, A. A., Mazhar, M., Molloy, K. C., & Kociok-Kohn, G. (2008). Copper-cobalt heterobimetallic ceramic oxide thin film deposition: Synthesis, characterization and application of precursor. Inorganic Chemistry Communications, 11(10), 1159-1161. https://doi.org/10.1016/j.inoche.2008.06.018