Copper-cobalt heterobimetallic ceramic oxide thin film deposition: Synthesis, characterization and application of precursor

M Hamid, A A Tahir, M Mazhar, K C Molloy, Gabriele Kociok-Kohn

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Thin films of halide free Cu-Co mixed metal oxide have been prepared at 390 degrees C from the heterobimetallic complex Co-4(THF)(4)(TFA)(8)(mu-OH)(2)Cu-2(dmae)(2).0.5C(7)H(8) (1) [dmae=N,N-dimethylaminoethanol ((CH3)(2),NCH2CH2O-), TFA = triflouroacetate (CF3COO-), THIF = tetra hyd rofurane (C4H8O)] which was prepared by the reaction of [Cu(dmae)Cl](4) and Co(TFA)(2).4H(2)O. The precursor was characterized for its melting point, elemental composition, FTIR and X-ray single crystal structure determination. Thin films grown on glass substrate by using AACVID out of complex I were characterized by XRD and SEM. TGA and AACVD experiments reveal it to be a suitable precursor for the deposition of halide free Cu-Co mixedmetal oxide thin films at relatively low temperatures. (C) 2008 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)1159-1161
Number of pages3
JournalInorganic Chemistry Communications
Issue number10
Publication statusPublished - 2008


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