Copper-cobalt heterobimetallic ceramic oxide thin film deposition: Synthesis, characterization and application of precursor

M Hamid, A A Tahir, M Mazhar, K C Molloy, Gabriele Kociok-Kohn

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Thin films of halide free Cu-Co mixed metal oxide have been prepared at 390 degrees C from the heterobimetallic complex Co-4(THF)(4)(TFA)(8)(mu-OH)(2)Cu-2(dmae)(2).0.5C(7)H(8) (1) [dmae=N,N-dimethylaminoethanol ((CH3)(2),NCH2CH2O-), TFA = triflouroacetate (CF3COO-), THIF = tetra hyd rofurane (C4H8O)] which was prepared by the reaction of [Cu(dmae)Cl](4) and Co(TFA)(2).4H(2)O. The precursor was characterized for its melting point, elemental composition, FTIR and X-ray single crystal structure determination. Thin films grown on glass substrate by using AACVID out of complex I were characterized by XRD and SEM. TGA and AACVD experiments reveal it to be a suitable precursor for the deposition of halide free Cu-Co mixedmetal oxide thin films at relatively low temperatures. (C) 2008 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)1159-1161
Number of pages3
JournalInorganic Chemistry Communications
Volume11
Issue number10
DOIs
Publication statusPublished - 2008

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Cobalt
Oxide films
Copper
cobalt
ceramics
Thin films
copper
halides
oxides
synthesis
Deanol
thin films
mixed oxides
Oxides
melting points
metal oxides
Melting point
Crystal structure
Metals
Single crystals

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Copper-cobalt heterobimetallic ceramic oxide thin film deposition: Synthesis, characterization and application of precursor. / Hamid, M; Tahir, A A; Mazhar, M; Molloy, K C; Kociok-Kohn, Gabriele.

In: Inorganic Chemistry Communications, Vol. 11, No. 10, 2008, p. 1159-1161.

Research output: Contribution to journalArticle

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AU - Kociok-Kohn, Gabriele

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AB - Thin films of halide free Cu-Co mixed metal oxide have been prepared at 390 degrees C from the heterobimetallic complex Co-4(THF)(4)(TFA)(8)(mu-OH)(2)Cu-2(dmae)(2).0.5C(7)H(8) (1) [dmae=N,N-dimethylaminoethanol ((CH3)(2),NCH2CH2O-), TFA = triflouroacetate (CF3COO-), THIF = tetra hyd rofurane (C4H8O)] which was prepared by the reaction of [Cu(dmae)Cl](4) and Co(TFA)(2).4H(2)O. The precursor was characterized for its melting point, elemental composition, FTIR and X-ray single crystal structure determination. Thin films grown on glass substrate by using AACVID out of complex I were characterized by XRD and SEM. TGA and AACVD experiments reveal it to be a suitable precursor for the deposition of halide free Cu-Co mixedmetal oxide thin films at relatively low temperatures. (C) 2008 Elsevier B.V. All rights reserved.

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