Controlling the on/off current ratio of ferroelectric field-effect transistors

Ilias Katsouras, Dong Zhao, Mark Jan Spijkman, Mengyuan Li, Paul W.M. Blom, Dago M. De Leeuw, Kamal Asadi

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

The on/off current ratio in organic ferroelectric field-effect transistors (FeFETs) is largely determined by the position of the threshold voltage, the value of which can show large device-to-device variations. Here we show that by employing a dual-gate layout for the FeFET, we can gain full control over the on/off ratio. In the resulting dual-gate FeFET the ferroelectric gate provides the memory functionality and the second, non-ferroelectric, control gate is advantageously used to set the threshold voltage. The on/off ratio can thus be maximized at the readout bias. The operation is explained by the quantitative analysis of charge transport in a dual-gate FeFET.

Original languageEnglish
Article number12094
JournalScientific Reports
Volume5
DOIs
Publication statusPublished - 10 Jul 2015

ASJC Scopus subject areas

  • General

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