Controlling the on/off current ratio of ferroelectric field-effect transistors

Ilias Katsouras; Dong Zhao; Mark Jan Spijkman; Mengyuan Li; Paul W.M. Blom; Dago M. De Leeuw; Kamal Asadi

doi:10.1038/srep12094

Controlling the on/off current ratio of ferroelectric field-effect transistors

Ilias Katsouras, Dong Zhao, Mark Jan Spijkman, Mengyuan Li, Paul W.M. Blom, Dago M. De Leeuw, Kamal Asadi

Department of Physics

Research output: Contribution to journal › Article › peer-review

44 Citations (SciVal)

Abstract

The on/off current ratio in organic ferroelectric field-effect transistors (FeFETs) is largely determined by the position of the threshold voltage, the value of which can show large device-to-device variations. Here we show that by employing a dual-gate layout for the FeFET, we can gain full control over the on/off ratio. In the resulting dual-gate FeFET the ferroelectric gate provides the memory functionality and the second, non-ferroelectric, control gate is advantageously used to set the threshold voltage. The on/off ratio can thus be maximized at the readout bias. The operation is explained by the quantitative analysis of charge transport in a dual-gate FeFET.

Original language	English
Article number	12094
Journal	Scientific Reports
Volume	5
DOIs	https://doi.org/10.1038/srep12094
Publication status	Published - 10 Jul 2015

Funding

We gratefully acknowledge G. Gelinck (Holst Centre, the Netherlands) for fruitful discussions. K.A. acknowledges Alexander von Humboldt Foundation for the funding provided in the framework of the Sofja Kovalevskaja Award endowed by the Federal Ministry of Education and Research, Germany. The authors acknowledge financial support from Max-Planck Institute for Polymer Research (Mainz, Germany).

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abstract = "The on/off current ratio in organic ferroelectric field-effect transistors (FeFETs) is largely determined by the position of the threshold voltage, the value of which can show large device-to-device variations. Here we show that by employing a dual-gate layout for the FeFET, we can gain full control over the on/off ratio. In the resulting dual-gate FeFET the ferroelectric gate provides the memory functionality and the second, non-ferroelectric, control gate is advantageously used to set the threshold voltage. The on/off ratio can thus be maximized at the readout bias. The operation is explained by the quantitative analysis of charge transport in a dual-gate FeFET.",

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AU - Blom, Paul W.M.

AU - De Leeuw, Dago M.

AU - Asadi, Kamal

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Controlling the on/off current ratio of ferroelectric field-effect transistors

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