Abstract
In this letter, we demonstrate that by blending insulating polymers, one can fabricate an insulating layer with controllable surface energy for organic field-effect transistors. As a model system, we used copper phthalocyanine evaporated on layers of polymethyl metacrylate blended with polystyrene with different blending ratios and measured the field-effect mobility in transistors. We show that the highest field-effect mobility is achieved for identical surface energies of the dielectric and the semiconductor. This simple technique demonstrates the viability of using the blends of insulating polymers to systematically control the surface energy of the gate dielectric toward achieving better performances.
| Original language | English |
|---|---|
| Article number | 093302 |
| Journal | Applied Physics Letters |
| Volume | 94 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2009 |
Funding
This work was supported in part by the Research Grants Council of Hong Kong SAR, particularly, under Grant Nos. CUHK4172/06E and CUHK02/CRF/08. J. An thanks the financial support by The Chinese University of Hong Kong. J. Gao would like thank Professor D. G. Ma from Changchun Institute of Applied Chemistry for valuable discussion. Technical assistance by Dr. N. Ke, Dr. W. Y. Cheung, and Mr. W. K. Chan is gratefully acknowledged.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)