Controlling charge injection by self-assembled monolayers in bottom-gate and top-gate organic field-effect transistors

Fatemeh Gholamrezaie; Kamal Asadi; Romero A.H.J. Kicken; Bea M.W. Langeveld-Voss; Dago M. De Leeuw; Paul W.M. Blom

doi:10.1016/j.synthmet.2011.08.020

Controlling charge injection by self-assembled monolayers in bottom-gate and top-gate organic field-effect transistors

Fatemeh Gholamrezaie
, Kamal Asadi
, Romero A.H.J. Kicken
, Bea M.W. Langeveld-Voss
, Dago M. De Leeuw
, Paul W.M. Blom

Department of Physics

Rijksuniversiteit Groningen
Molecular Electronics
Nederlandse Organisatie Voor Toegepast Natuurwetenschappelijk Onderzoek - TNO
Philips Research Laboratories
Holst Centre

Research output: Contribution to journal › Article › peer-review

11 Citations (SciVal)

Abstract

We investigate the modulation of the charge injection in organic field-effect transistors with self-assembled monolayers (SAMs) using both a bottom-gate and a top-gate geometry. The current modulation by using SAMs is more pronounced in the top-gate geometry due to the better defined upper surface of the bottom source and drain electrodes. By modifying Ag electrodes with a perfluorinated monolayer an injection barrier as high as 1.6 eV into poly(9,9-dioctylfluorene) can be surmounted, enabling the measurement of the saturated field-effect mobility of 6 × 10^-5 cm² V^-1 s^-1.

Original language	English
Pages (from-to)	2226-2229
Number of pages	4
Journal	Synthetic Metals
Volume	161
Issue number	21-22
DOIs	https://doi.org/10.1016/j.synthmet.2011.08.020
Publication status	Published - Nov 2011

Funding

We gratefully acknowledge technical support of J. Harkema and financial support from the research program of the Dutch Polymer Institute (DPI) Project no. 624, and t he EU project ONE-P no. 212311.

Keywords

Charge injection
Organic field-effect transistor
Self-assembled monolayer

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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10.1016/j.synthmet.2011.08.020

Cite this

@article{dea660c599d34df0b4428a0991a082aa,

title = "Controlling charge injection by self-assembled monolayers in bottom-gate and top-gate organic field-effect transistors",

abstract = "We investigate the modulation of the charge injection in organic field-effect transistors with self-assembled monolayers (SAMs) using both a bottom-gate and a top-gate geometry. The current modulation by using SAMs is more pronounced in the top-gate geometry due to the better defined upper surface of the bottom source and drain electrodes. By modifying Ag electrodes with a perfluorinated monolayer an injection barrier as high as 1.6 eV into poly(9,9-dioctylfluorene) can be surmounted, enabling the measurement of the saturated field-effect mobility of 6 {\texttimes} 10-5 cm2 V-1 s-1.",

keywords = "Charge injection, Organic field-effect transistor, Self-assembled monolayer",

author = "Fatemeh Gholamrezaie and Kamal Asadi and Kicken, \{Romero A.H.J.\} and Langeveld-Voss, \{Bea M.W.\} and \{De Leeuw\}, \{Dago M.\} and Blom, \{Paul W.M.\}",

year = "2011",

month = nov,

doi = "10.1016/j.synthmet.2011.08.020",

language = "English",

volume = "161",

pages = "2226--2229",

journal = "Synthetic Metals",

issn = "0379-6779",

publisher = "Elsevier B.V.",

number = "21-22",

}

TY - JOUR

T1 - Controlling charge injection by self-assembled monolayers in bottom-gate and top-gate organic field-effect transistors

AU - Gholamrezaie, Fatemeh

AU - Asadi, Kamal

AU - Kicken, Romero A.H.J.

AU - Langeveld-Voss, Bea M.W.

AU - De Leeuw, Dago M.

AU - Blom, Paul W.M.

PY - 2011/11

Y1 - 2011/11

N2 - We investigate the modulation of the charge injection in organic field-effect transistors with self-assembled monolayers (SAMs) using both a bottom-gate and a top-gate geometry. The current modulation by using SAMs is more pronounced in the top-gate geometry due to the better defined upper surface of the bottom source and drain electrodes. By modifying Ag electrodes with a perfluorinated monolayer an injection barrier as high as 1.6 eV into poly(9,9-dioctylfluorene) can be surmounted, enabling the measurement of the saturated field-effect mobility of 6 × 10-5 cm2 V-1 s-1.

AB - We investigate the modulation of the charge injection in organic field-effect transistors with self-assembled monolayers (SAMs) using both a bottom-gate and a top-gate geometry. The current modulation by using SAMs is more pronounced in the top-gate geometry due to the better defined upper surface of the bottom source and drain electrodes. By modifying Ag electrodes with a perfluorinated monolayer an injection barrier as high as 1.6 eV into poly(9,9-dioctylfluorene) can be surmounted, enabling the measurement of the saturated field-effect mobility of 6 × 10-5 cm2 V-1 s-1.

KW - Charge injection

KW - Organic field-effect transistor

KW - Self-assembled monolayer

UR - https://www.scopus.com/pages/publications/80055071648

U2 - 10.1016/j.synthmet.2011.08.020

DO - 10.1016/j.synthmet.2011.08.020

M3 - Article

AN - SCOPUS:80055071648

SN - 0379-6779

VL - 161

SP - 2226

EP - 2229

JO - Synthetic Metals

JF - Synthetic Metals

IS - 21-22

ER -

Controlling charge injection by self-assembled monolayers in bottom-gate and top-gate organic field-effect transistors

Abstract

Funding

Keywords

ASJC Scopus subject areas

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