Controlling charge injection by self-assembled monolayers in bottom-gate and top-gate organic field-effect transistors

Fatemeh Gholamrezaie, Kamal Asadi, Romero A.H.J. Kicken, Bea M.W. Langeveld-Voss, Dago M. De Leeuw, Paul W.M. Blom

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We investigate the modulation of the charge injection in organic field-effect transistors with self-assembled monolayers (SAMs) using both a bottom-gate and a top-gate geometry. The current modulation by using SAMs is more pronounced in the top-gate geometry due to the better defined upper surface of the bottom source and drain electrodes. By modifying Ag electrodes with a perfluorinated monolayer an injection barrier as high as 1.6 eV into poly(9,9-dioctylfluorene) can be surmounted, enabling the measurement of the saturated field-effect mobility of 6 × 10-5 cm2 V-1 s-1.

Original languageEnglish
Pages (from-to)2226-2229
Number of pages4
JournalSynthetic Metals
Volume161
Issue number21-22
DOIs
Publication statusPublished - Nov 2011

Keywords

  • Charge injection
  • Organic field-effect transistor
  • Self-assembled monolayer

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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