Controlling charge injection by self-assembled monolayers in bottom-gate and top-gate organic field-effect transistors

Fatemeh Gholamrezaie; Kamal Asadi; Romero A.H.J. Kicken; Bea M.W. Langeveld-Voss; Dago M. De Leeuw; Paul W.M. Blom

doi:10.1016/j.synthmet.2011.08.020

Controlling charge injection by self-assembled monolayers in bottom-gate and top-gate organic field-effect transistors

Fatemeh Gholamrezaie, Kamal Asadi, Romero A.H.J. Kicken, Bea M.W. Langeveld-Voss, Dago M. De Leeuw, Paul W.M. Blom

Department of Physics

Research output: Contribution to journal › Article › peer-review

11 Citations (SciVal)

Abstract

We investigate the modulation of the charge injection in organic field-effect transistors with self-assembled monolayers (SAMs) using both a bottom-gate and a top-gate geometry. The current modulation by using SAMs is more pronounced in the top-gate geometry due to the better defined upper surface of the bottom source and drain electrodes. By modifying Ag electrodes with a perfluorinated monolayer an injection barrier as high as 1.6 eV into poly(9,9-dioctylfluorene) can be surmounted, enabling the measurement of the saturated field-effect mobility of 6 × 10^-5 cm² V^-1 s^-1.

Original language	English
Pages (from-to)	2226-2229
Number of pages	4
Journal	Synthetic Metals
Volume	161
Issue number	21-22
DOIs	https://doi.org/10.1016/j.synthmet.2011.08.020
Publication status	Published - Nov 2011

Keywords

Charge injection
Organic field-effect transistor
Self-assembled monolayer

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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10.1016/j.synthmet.2011.08.020

Cite this

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title = "Controlling charge injection by self-assembled monolayers in bottom-gate and top-gate organic field-effect transistors",

abstract = "We investigate the modulation of the charge injection in organic field-effect transistors with self-assembled monolayers (SAMs) using both a bottom-gate and a top-gate geometry. The current modulation by using SAMs is more pronounced in the top-gate geometry due to the better defined upper surface of the bottom source and drain electrodes. By modifying Ag electrodes with a perfluorinated monolayer an injection barrier as high as 1.6 eV into poly(9,9-dioctylfluorene) can be surmounted, enabling the measurement of the saturated field-effect mobility of 6 × 10-5 cm2 V-1 s-1.",

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AU - Gholamrezaie, Fatemeh

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AU - Langeveld-Voss, Bea M.W.

AU - De Leeuw, Dago M.

AU - Blom, Paul W.M.

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AB - We investigate the modulation of the charge injection in organic field-effect transistors with self-assembled monolayers (SAMs) using both a bottom-gate and a top-gate geometry. The current modulation by using SAMs is more pronounced in the top-gate geometry due to the better defined upper surface of the bottom source and drain electrodes. By modifying Ag electrodes with a perfluorinated monolayer an injection barrier as high as 1.6 eV into poly(9,9-dioctylfluorene) can be surmounted, enabling the measurement of the saturated field-effect mobility of 6 × 10-5 cm2 V-1 s-1.

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Controlling charge injection by self-assembled monolayers in bottom-gate and top-gate organic field-effect transistors

Abstract

Keywords

ASJC Scopus subject areas

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