Controllable chemical vapor deposition of large area uniform nanocrystalline graphene directly on silicon dioxide

Jie Sun, Niclas Lindvall, Matthew Cole, Teng Wang, Tim J. Booth, Peter Bggild, Kenneth B.K. Teo, Johan Liu, August Yurgens

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Abstract

Metal-catalyst-free chemical vapor deposition (CVD) of large area uniform nanocrystalline graphene on oxidized silicon substrates is demonstrated. The material grows slowly, allowing for thickness control down to monolayer graphene. The as-grown thin films are continuous with no observable pinholes, and are smooth and uniform across whole wafers, as inspected by optical-, scanning electron-, and atomic force microscopy. The sp 2 hybridized carbon structure is confirmed by Raman spectroscopy. Room temperature electrical measurements show ohmic behavior (sheet resistance similar to exfoliated graphene) and up to 13 of electric-field effect. The Hall mobility is ∼40 cm 2/Vs, which is an order of magnitude higher than previously reported values for nanocrystalline graphene. Transmission electron microscopy, Raman spectroscopy, and transport measurements indicate a graphene crystalline domain size ∼10 nm. The absence of transfer to another substrate allows avoidance of wrinkles, holes, and etching residues which are usually detrimental to device performance. This work provides a broader perspective of graphene CVD and shows a viable route toward applications involving transparent electrodes.

Original languageEnglish
Article number044103
JournalJournal of Applied Physics
Volume111
Issue number4
DOIs
Publication statusPublished - 15 Feb 2012

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Sun, J., Lindvall, N., Cole, M., Wang, T., Booth, T. J., Bggild, P., Teo, K. B. K., Liu, J., & Yurgens, A. (2012). Controllable chemical vapor deposition of large area uniform nanocrystalline graphene directly on silicon dioxide. Journal of Applied Physics, 111(4), [044103]. https://doi.org/10.1063/1.3686135