Control of valley and spatial subbands in double-gate MOSFETs - Electronic states in a silicon quantum well

Kei Takashina, Yukinori Ono, Akira Fujiwara, Yasuo Takahashi, Yoshiro Hirayama

Research output: Chapter or section in a book/report/conference proceeding › Chapter in a published conference proceeding

Original language	English
Title of host publication	IEIC TECHNICAL REPORT, (Institute of Electronics, Information and Communication Engineers), Vol. 105, No. 155, (SDM2005 87-104), 39-42
Publication status	Published - 2005

Cite this

Control of valley and spatial subbands in double-gate MOSFETs - Electronic states in a silicon quantum well. / Takashina, Kei; Ono, Yukinori; Fujiwara, Akira et al.
IEIC TECHNICAL REPORT, (Institute of Electronics, Information and Communication Engineers), Vol. 105, No. 155, (SDM2005 87-104), 39-42. 2005.

Research output: Chapter or section in a book/report/conference proceeding › Chapter in a published conference proceeding

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year = "2005",

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T1 - Control of valley and spatial subbands in double-gate MOSFETs - Electronic states in a silicon quantum well

AU - Takashina, Kei

AU - Ono, Yukinori

AU - Fujiwara, Akira

AU - Takahashi, Yasuo

AU - Hirayama, Yoshiro

PY - 2005

Y1 - 2005

M3 - Chapter in a published conference proceeding

BT - IEIC TECHNICAL REPORT, (Institute of Electronics, Information and Communication Engineers), Vol. 105, No. 155, (SDM2005 87-104), 39-42

ER -