Control of valley and spatial subbands in double-gate MOSFETs - Electronic states in a silicon quantum well

Kei Takashina, Yukinori Ono, Akira Fujiwara, Yasuo Takahashi, Yoshiro Hirayama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publicationIEIC TECHNICAL REPORT, (Institute of Electronics, Information and Communication Engineers), Vol. 105, No. 155, (SDM2005 87-104), 39-42
Publication statusPublished - 2005

Cite this

Takashina, K., Ono, Y., Fujiwara, A., Takahashi, Y., & Hirayama, Y. (2005). Control of valley and spatial subbands in double-gate MOSFETs - Electronic states in a silicon quantum well. In IEIC TECHNICAL REPORT, (Institute of Electronics, Information and Communication Engineers), Vol. 105, No. 155, (SDM2005 87-104), 39-42